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MT9M032C12STMU

Onsemi

MT9M032C12STMU by Onsemi

The Onsemi MT9M032C12STMU is an image sensor with 2.20x2.20 um pixel size, 49.5 MHz master clock, and 70.1 dB dynamic range. Ideal for applications requiring high-resolution imaging such as surveillance cameras, industrial inspection systems, and medical devices due to its high-quality digital voltage output interface and frame rate of 60 fps.

Median Price

$98.730

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,617 parts In-Stock

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$98.730

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Digiode

USA . 750 parts In-Stock

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750

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Nova Conductors

Japan . 42 parts In-Stock

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42

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Kulean Microsystems

USA . 8,225 parts In-Stock

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SupplyDigital Components

Austria . 8,032 parts In-Stock

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TANS Electronics

Latvia . 6,958 parts In-Stock

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Problanco Electronics

Mexico . 4,478 parts In-Stock

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Argo Parts USA

USA . 3,855 parts In-Stock

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Continental Prestige Electronics

USA . 3,251 parts In-Stock

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Corphita

USA . 1,454 parts In-Stock

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Corohmni

South Africa . 295 parts In-Stock

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Overview

Capture every moment with the MT9M032C12STMU image sensor by Onsemi. This cutting-edge technology offers unparalleled quality and precision, making it the perfect choice for a wide range of applications. From security cameras to automotive systems, this sensor delivers crystal-clear images with exceptional detail. Trust Onsemi's expertise and innovation to enhance your products and take your projects to the next level. Experience the value and benefits of the MT9M032C12STMU today.

Feature Benefit Bullets

Pixel Size (um) 2.20X2.20

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage 1.9 V

Efficient power usage with a relatively low maximum supply voltage.

Master Clock 49.5 MHz

High master clock frequency enables fast data processing and image capturing capabilities.

Body Width 11.43 inch

Compact and slim design for easy integration into various devices.

Power Supplies (V) 2.8

Stable power supply voltage for consistent performance.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensor technology offers high image quality and low power consumption.

Body Height 2.3 mm

Low profile design suitable for thin devices or applications with limited space.

Package Shape or Style SQUARE

Square form factor for easy mounting and integration.

Minimum Supply Voltage 1.7 V

Low minimum supply voltage for energy efficiency and extended battery life.

Maximum Operating Temperature 70 °C

Wide operating temperature range for versatile use in different environments.

Horizontal Pixel 1472

High resolution horizontal pixel count for detailed image capture.

Output Range 0.20-3.05V

Wide output range allows for flexibility in signal processing and compatibility with various systems.

Output Type DIGITAL VOLTAGE

Digital output signal for easy integration with digital systems and processors.

Minimum Operating Temperature -30 °C

Wide minimum operating temperature range enables use in extreme cold conditions.

Maximum Operating Current 30 mA

Low operating current for energy efficiency and reduced power consumption.

Housing CERAMIC

Durable ceramic housing for protection and reliability in harsh environments.

Dynamic Range 70.1 dB

Wide dynamic range for capturing both bright and dark areas in the same scene.

Vertical Pixel 1096

High resolution vertical pixel count for detailed image capture.

Body Length/Diameter 11.43 mm

Compact and streamlined body design for easy installation and integration.

Optical Format (inch) 1/4.5

Standard optical format compatible with a wide range of lenses and imaging systems.

Termination Type SOLDER

Secure solder termination for reliable electrical connections in demanding applications.

Output Interface Type 2-WIRE INTERFACE

Two-wire interface for easy connection and communication with external devices.

Frame Rate 60 fps

High frame rate for smooth and clear video recording and motion capture.

Array Type FRAME

Frame array structure for efficient and organized image capture.

Mounting Feature SURFACE MOUNT

Surface mountable for easy and secure attachment to circuit boards and devices.

Technical Specifications

Image Sensors MT9M032C12STMU attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

70.1 dB

Frame Rate:

60 fps

Horizontal Pixel:

1472

Housing:

CERAMIC

Master Clock:

49.5 MHz

Mounting Feature:

Maximum Operating Current:

30 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.20X2.20

Power Supplies (V):

2.8

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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