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MT9M021IA3XTM-DPBR

Onsemi

MT9M021IA3XTM-DPBR by Onsemi

MT9M021IA3XTM-DPBR by Onsemi is a 1/3-inch CMOS image sensor with 1280x960 pixels. It operates at 50 MHz master clock, offers 64 dB dynamic range, and has a frame rate of 45 fps. Ideal for digital voltage output applications in surveillance cameras, drones, and industrial imaging systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,432 parts In-Stock

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Digiode

USA . 2,497 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,862 parts In-Stock

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$2.060

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$2.060

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AZTECH Wire

Italy . 369 parts In-Stock

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$12.246

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369

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Ampacity Inc.

Singapore . 949 parts In-Stock

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$54.750

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949

$54.750

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Perfect Parts

USA . 16,128 parts In-Stock

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Kulean Microsystems

USA . 7,548 parts In-Stock

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Problanco Electronics

Mexico . 3,967 parts In-Stock

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TANS Electronics

Latvia . 3,655 parts In-Stock

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Argo Parts USA

USA . 3,529 parts In-Stock

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3,529

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Continental Prestige Electronics

USA . 1,914 parts In-Stock

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SupplyDigital Components

Austria . 1,590 parts In-Stock

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Corphita

USA . 1,205 parts In-Stock

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Corohmni

South Africa . 350 parts In-Stock

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UHIMA Technologies

Türkiye . 236 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Capture stunning images with the MT9M021IA3XTM-DPBR Image Sensor from Onsemi. Known for their superior quality and precision engineering, Onsemi delivers a cutting-edge product that is perfect for a wide range of applications. Whether you're in the automotive industry, surveillance, or consumer electronics, this sensor provides unparalleled value, exceptional performance, and high sensitivity to light. Take your imaging capabilities to the next level with the MT9M021IA3XTM-DPBR and experience the benefits of top-tier technology.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.95 V

Allows for efficient power usage and helps in prolonging battery life.

Master Clock: 50 MHz

Provides fast and accurate timing for capturing high-quality images.

Body Width: 10 inch

Compact size makes it easy to integrate into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high image quality.

Minimum Operating Temperature: -30 °C

Operates effectively in a wide range of temperature conditions.

Maximum Operating Current: 55 mA

Efficient power usage and low operating current make it suitable for portable devices.

Dynamic Range: 64 dB

Provides a wide range of sensitivity to capture both bright and dark scenes accurately.

Frame Rate: 45 fps

High frame rate allows for smooth and clear video recording.

Mounting Feature: SURFACE MOUNT

Easy to mount on circuit boards for streamlined manufacturing processes.

Technical Specifications

Image Sensors MT9M021IA3XTM-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE, IBGA PACKAGE ALSO AVAILABLE

Array Type:

SINGLE FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

45 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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