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MT9M114D00STCZK24BC1-200

Onsemi

MT9M114D00STCZK24BC1-200 by Onsemi

Onsemi's MT9M114D00STCZK24BC1-200 is a CMOS image sensor with 1.90x1.90 um pixel size, 54 MHz master clock, and 70.8 dB dynamic range. Ideal for applications requiring a digital voltage output interface, such as frame arrays in surveillance cameras or industrial imaging systems at temperatures ranging from -30 to 70°C.

Median Price

$10.795

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 28,696 parts In-Stock

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DigiKey

USA . 28,696 parts In-Stock

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$9.110

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Rochester

USA . 8,659 parts In-Stock

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$12.480

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$11.170

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$10.510

8,659

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$12.480

$11.170

$10.510

Distributors (In-Stock)

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Digiode

USA . 2,378 parts In-Stock

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$13.196

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Vyrian

USA . 1,899 parts In-Stock

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$13.890

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Flip Electronics

USA . 28,696 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Ampacity Inc.

Singapore . 18,555 parts In-Stock

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$11.810

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Corphita

USA . 866 parts In-Stock

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$12.501

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Corohmni

South Africa . 328 parts In-Stock

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$13.890

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 18,025 parts In-Stock

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Problanco Electronics

Mexico . 8,190 parts In-Stock

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SupplyDigital Components

Austria . 5,927 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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Argo Parts USA

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TANS Electronics

Latvia . 1,562 parts In-Stock

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UHIMA Technologies

Türkiye . 456 parts In-Stock

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Netroflash

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Overview

Unlock the power of high-quality imaging with the MT9M114D00STCZK24BC1-200 by Onsemi. Designed for superior performance, this image sensor boasts a wide array of applications, from security cameras to industrial automation. With Onsemi's reputation for excellence in manufacturing, you can trust that this sensor delivers unparalleled value and benefits. Experience crystal-clear images, precise data capture, and seamless integration with the MT9M114D00STCZK24BC1-200. Elevate your imaging projects with this innovative solution today!

Feature Benefit Bullets

Pixel Size (um): 1.90X1.90

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 1.95 V

Efficient power usage with a low maximum supply voltage.

Master Clock: 54 MHz

High master clock frequency for fast data processing and image capture.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor type provides high sensitivity and low noise performance.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for use in various environments.

Horizontal Pixel: 1296

High pixel count for detailed and sharp image capture.

Output Range: 0.45-1.35V

Wide output range for flexible signal processing and compatibility.

Output Type: DIGITAL VOLTAGE

Digital voltage output for easy integration with digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature for use in cold environments.

Maximum Operating Current: 45 mA

Efficient power usage with a low maximum operating current.

Dynamic Range: 70.8 dB

High dynamic range for capturing both dark and bright areas in the image.

Vertical Pixel: 976

Vertical pixel count for high-quality image resolution.

Optical Format (inch): 1/6

Compact optical format for space-saving design.

Termination Type: SOLDER

Solder termination for secure and reliable connection.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface for easy communication with other devices.

Frame Rate: 30 fps

High frame rate for smooth and clear video capture.

Array Type: FRAME

Frame array type for organized and efficient image capture.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation.

Technical Specifications

Image Sensors MT9M114D00STCZK24BC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Dynamic Range:

70.8 dB

Frame Rate:

30 fps

Horizontal Pixel:

1296

Master Clock:

54 MHz

Mounting Feature:

Maximum Operating Current:

45 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/6

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.90X1.90

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

976

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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