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KAI-08670-AXA-JD-AE

Onsemi

KAI-08670-AXA-JD-AE by Onsemi

KAI-08670-AXA-JD-AE by Onsemi is an image sensor with 7.4x7.4 um pixel size, 40 MHz master clock, and 82 dB dynamic range. Ideal for applications requiring high-quality imaging such as surveillance cameras, industrial inspection systems, and medical imaging devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,550 parts In-Stock

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Digiode

USA . 1,286 parts In-Stock

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SupplyDigital Components

Austria . 8,398 parts In-Stock

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TANS Electronics

Latvia . 2,146 parts In-Stock

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Problanco Electronics

Mexico . 2,075 parts In-Stock

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Corphita

USA . 1,673 parts In-Stock

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Corohmni

South Africa . 221 parts In-Stock

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Kulean Microsystems

USA . 11 parts In-Stock

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Overview

Capture stunning images with the KAI-08670-AXA-JD-AE image sensor by Onsemi. Designed for high-quality performance, this sensor offers unparalleled precision and clarity in every shot. Ideal for a wide range of applications, from security cameras to medical imaging devices, this sensor delivers superior results every time. Experience the value of top-of-the-line technology with the KAI-08670-AXA-JD-AE, providing customers with the benefits of reliability, efficiency, and innovation. Choose excellence with Onsemi's cutting-edge image sensor technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

This smaller pixel size allows for higher resolution images to be captured with finer details.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage provides flexibility and reliability in power supply options.

Master Clock: 40 MHz

This high clock frequency enables fast readout speeds for capturing real-time images.

Body Width: 45.34 inch

The compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture capabilities, making this product a good choice for demanding imaging applications.

Body Height: 3.3 mm

The low body height allows for easy integration into various devices or systems.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides a standardized form factor for easy mounting and integration.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature makes this product suitable for use in a wide range of environments.

Horizontal Pixel: 3600

The high horizontal pixel count allows for capturing detailed and high-resolution images.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Maximum Operating Current: 11 mA

The low operating current helps in reducing power consumption and extending battery life in portable devices.

Dynamic Range: 82 dB

The high dynamic range allows for capturing both bright and dark areas in the same scene with great detail.

Vertical Pixel: 2400

The high vertical pixel count contributes to the overall image quality and sharpness of the captured images.

Body Length/Diameter: 47.24 mm

The moderate body length allows for easy handling and integration into various systems or devices.

Optical Format (inch): 1.26

The optical format specifies the size of the image sensor area, allowing for compatibility with various lenses and optical systems.

Termination Type: SOLDER

The solder termination type provides a reliable and secure connection for the image sensor in a circuit.

Frame Rate: 12 fps

The moderate frame rate is suitable for capturing smooth video footage or high-speed moving objects with good clarity.

Array Type: INTERLINE

Interline array type helps in reducing image lag and distortion during image capture, making this product suitable for fast-paced imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for secure and stable placement of the image sensor in a circuit board or system.

Technical Specifications

Image Sensors KAI-08670-AXA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 33 AND 9.7 MICRO VOLT PER ELECTRON; ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.3 mm

Body Length/Diameter:

47.24 mm

Dynamic Range:

82 dB

Frame Rate:

12 fps

Horizontal Pixel:

3600

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.26

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2400

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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