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KAF-8300-AAB-CB-AE

Onsemi

KAF-8300-AAB-CB-AE by Onsemi

The Onsemi KAF-8300-AAB-CB-AE is a CCD image sensor with 5.4x5.4 um pixel size, offering 3326 horizontal and 2504 vertical pixels. It operates b/w -10 to 70 °C with a dynamic range of 64.4 dB, outputting analog voltage at a data rate of 28 Mbps. Ideal for full-frame imaging applications due to its rectangular shape and through-hole mounting feature.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,019 parts In-Stock

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Digiode

USA . 1,450 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 3 parts In-Stock

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Kulean Microsystems

USA . 7,337 parts In-Stock

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Problanco Electronics

Mexico . 6,788 parts In-Stock

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TANS Electronics

Latvia . 4,796 parts In-Stock

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Corphita

USA . 1,381 parts In-Stock

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SupplyDigital Components

Austria . 940 parts In-Stock

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Corohmni

South Africa . 473 parts In-Stock

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UHIMA Technologies

Türkiye . 31 parts In-Stock

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Overview

Capture crystal-clear images with the KAF-8300-AAB-CB-AE Image Sensor from Onsemi. Boasting a high-quality CCD sensor and a wide dynamic range, this product is perfect for a variety of applications such as professional photography, scientific imaging, and industrial inspections. With its advanced features and reliable performance, customers can trust that they are getting a top-of-the-line product that will deliver exceptional results every time. Experience the difference with the KAF-8300-AAB-CB-AE and elevate your image capturing capabilities to new heights.

Feature Benefit Bullets

Pixel Size (um): 5.4X5.4

The small pixel size allows for improved image resolution and detail.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage ensures stable and reliable performance.

Body Width: 20.32 inch

The compact body width makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities, making this sensor a good choice for imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration into existing systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage helps in energy efficiency and reduces power consumption.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures the sensor can be used in a wide range of environments.

Horizontal Pixel: 3326

The high number of horizontal pixels results in detailed and high-resolution images.

Output Type: ANALOG VOLTAGE

Analog voltage output allows for easy integration with existing analog systems.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures the sensor can function in cold environments.

Housing: CERAMIC

Ceramic housing provides durability and protection to the sensor components.

Dynamic Range: 64.4 dB

A high dynamic range allows the sensor to capture a wide range of light intensities, resulting in quality images.

Vertical Pixel: 2504

The high number of vertical pixels contributes to the overall image quality and detail.

Body Length/Diameter: 29.21 mm

The compact body length/diameter makes it easy to incorporate the sensor into various designs.

Data Rate: 28 Mbps

The high data rate ensures fast and efficient transfer of image data.

Termination Type: SOLDER

Solder termination provides a reliable connection between the sensor and external components.

Array Type: FULL FRAME

Full frame array type ensures maximum coverage for image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure installation of the sensor in a variety of applications.

Technical Specifications

Image Sensors KAF-8300-AAB-CB-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 23 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.32 inch

Body Height:

4.42 mm

Body Length/Diameter:

29.21 mm

Data Rate:

28 Mbps

Dynamic Range:

64.4 dB

Horizontal Pixel:

3326

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

5.4X5.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2504

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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