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NOIP1SN0300A-QDI

Onsemi

NOIP1SN0300A-QDI by Onsemi

NOIP1SN0300A-QDI by Onsemi features 4.80X4.80 um pixel size, 72 MHz master clock, and 640x480 resolution. This image sensor is ideal for applications requiring high-speed digital imaging with a dynamic range of 60 dB.

Median Price

$53.070

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 654 parts In-Stock

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$53.070

100+ parts

$52.020

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$50.960

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654

$53.070

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Digiode

USA . 719 parts In-Stock

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$50.416

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719

$50.416

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Vyrian

USA . 8,507 parts In-Stock

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AZTECH Wire

Italy . 301 parts In-Stock

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$10.420

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301

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Corphita

USA . 1,901 parts In-Stock

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$47.763

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Corohmni

South Africa . 380 parts In-Stock

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$53.070

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380

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Kulean Microsystems

USA . 7,599 parts In-Stock

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TANS Electronics

Latvia . 6,262 parts In-Stock

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Problanco Electronics

Mexico . 5,481 parts In-Stock

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SupplyDigital Components

Austria . 1,457 parts In-Stock

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Perfect Parts

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Microchip USA

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Overview

Capture every moment in stunning clarity with the NOIP1SN0300A-QDI image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability. Perfect for applications in security cameras, automotive vision systems, and industrial imaging, this image sensor offers unparalleled value with its high-resolution output and impressive dynamic range. Trust Onsemi to provide you with the best technology for your imaging needs.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

Provides high resolution and image quality for detailed captures.

Maximum Supply Voltage: 1.9 V

Ensures the sensor operates within safe voltage limits for longevity.

Master Clock: 72 MHz

High clock frequency allows for fast data processing and image capture.

Body Width: 14.22 inch

Compact size makes it ideal for integration into various devices.

Power Supplies (V): 3.3

Efficient power supply for the sensor's operations.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology provides high sensitivity and low noise for clear images.

Body Height: 2.28 mm

Slim profile allows for versatile placement and integration.

Package Shape or Style: SQUARE

Simplifies mounting and alignment in devices.

Minimum Supply Voltage: 1.7 V

Allows for operation at lower voltages to conserve power.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures for reliable performance in varying environments.

Horizontal Pixel: 640

Offers high-resolution horizontal image capture.

Output Type: DIGITAL VOLTAGE

Provides accurate and reliable digital output signals for data processing.

Minimum Operating Temperature: -40 °C

Can operate in cold temperatures for versatile use cases.

Maximum Operating Current: 80 mA

Efficient current consumption for energy-efficient operation.

Dynamic Range: 60 dB

Wide dynamic range for capturing both dark and bright parts of an image.

Vertical Pixel: 480

High vertical resolution for detailed image captures.

Body Length/Diameter: 14.22 mm

Compact size for easy integration and space-saving designs.

Spectral Response (nm): 400-1000

Covers a wide range of wavelengths for versatile imaging applications.

Optical Format (inch): 1/4

Standard optical format for compatibility with various lenses.

Termination Type: SOLDER

Secure termination method for reliable connections.

Output Interface Type: 4-WIRE INTERFACE

Modern interface for easy data transfer and connectivity.

Frame Rate: 815 fps

High frame rate allows for capturing fast-moving objects with clarity.

Array Type: FRAME

Frame array design for efficient image processing and data capture.

Mounting Feature: SURFACE MOUNT

Simplified mounting process for easy integration into devices.

Technical Specifications

Image Sensors NOIP1SN0300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3.2 TO 3.4 V SUPPLY VOLTAGE, GLOBAL SHUTTER

Array Type:

FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Dynamic Range:

60 dB

Frame Rate:

815 fps

Horizontal Pixel:

640

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Power Supplies (V):

3.3

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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