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AR0239ATSH00XUD20-E

Onsemi

AR0239ATSH00XUD20-E by Onsemi

Onsemi's AR0239ATSH00XUD20-E is a CMOS image sensor with 3x3 um pixel size, offering 1936 (H) x 1188 (V) resolution. It operates at -40 to 105 °C with a dynamic range of 128 dB and outputs digital voltage from 0.40-2.50V. Ideal for applications requiring high-speed imaging such as surveillance cameras and automotive vision systems due to its frame rate of 90 fps and compact 1/2.7 inch optical format.

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Native Components

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TANS Electronics

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Problanco Electronics

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SupplyDigital Components

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Overview

Capture the world in stunning clarity with the AR0239ATSH00XUD20-E image sensor by Onsemi. As a leader in the industry, Onsemi delivers top-notch quality and reliability in every product they produce. This cutting-edge image sensor boasts a wide array of applications, from automotive to security systems, offering customers unparalleled value and performance. With its high dynamic range and crisp resolution, this sensor is sure to exceed your expectations and bring your vision to life. Choose Onsemi for superior imaging solutions that will take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 3X3

With a small pixel size of 3X3 um, this image sensor is able to capture detailed images with high resolution.

Maximum Supply Voltage: 1.26 V

The low maximum supply voltage of 1.26 V helps in reducing power consumption and heat generation, making it energy-efficient.

Master Clock: 27 MHz

The high master clock frequency of 27 MHz enables fast data processing and transmission, resulting in quick and efficient image capture.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and excellent noise performance, making it a reliable choice for image capture applications.

Minimum Supply Voltage: 1.14 V

With a minimum supply voltage of 1.14 V, this image sensor allows for operation in low-power environments while maintaining optimal performance.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105 °C ensures reliable performance even in harsh environmental conditions, making it suitable for a wide range of applications.

Horizontal Pixel: 1936

With a high horizontal pixel count of 1936, this image sensor provides detailed and sharp images with excellent clarity.

Output Range: 0.40-2.50V

The wide output range of 0.40-2.50V allows for flexibility in signal processing and compatibility with various systems and devices.

Output Type: DIGITAL VOLTAGE

The digital voltage output type ensures accurate and reliable data transmission, making the image sensor suitable for high-performance imaging applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this image sensor can still function effectively in extreme cold conditions, enhancing its versatility.

Maximum Operating Current: 75 mA

The low maximum operating current of 75 mA contributes to the energy efficiency of the product, prolonging battery life in portable devices.

Dynamic Range: 128 dB

The wide dynamic range of 128 dB allows the image sensor to capture both bright and dark areas in a scene with high fidelity, producing images with excellent contrast.

Vertical Pixel: 1188

With a vertical pixel count of 1188, this image sensor captures images with a high level of detail and resolution, providing clear and sharp visuals.

Optical Format (inch): 1/2.7

The optical format of 1/2.7 inch determines the size of the image sensor, offering compatibility with a wide range of camera systems and lenses.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface type simplifies the connection and communication with other devices, enhancing the overall usability and integration of the image sensor.

Frame Rate: 90 fps

With a high frame rate of 90 fps, this image sensor can capture fast-moving subjects with smooth and fluid motion, making it ideal for video recording and dynamic imaging applications.

Array Type: FRAME

The frame array type ensures uniform and consistent image capture across the entire sensor surface, resulting in high-quality images with minimal distortion or artifacts.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor onto printed circuit boards, enabling efficient integration into electronic devices and systems.

Technical Specifications

Image Sensors AR0239ATSH00XUD20-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Dynamic Range:

128 dB

Frame Rate:

90 fps

Horizontal Pixel:

1936

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Vertical Pixel:

1188

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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