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MT9V136C12STC-DR

Onsemi

MT9V136C12STC-DR by Onsemi

MT9V136C12STC-DR by Onsemi is an image sensor with 5.60x5.60 um pixel size, 27 MHz master clock, and 74.6 dB dynamic range. Ideal for applications requiring a digital current output interface, such as frame arrays in surveillance cameras or industrial imaging systems.

Median Price

$9.100

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,520 parts In-Stock

1+ parts

$9.100

100+ parts

$8.550

1k+ parts

$7.740

10k+ parts

$7.740

1,520

$9.100

$8.550

$7.740

$7.740

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 4,560 parts In-Stock

1+ parts

$5.418

100+ parts

-

1k+ parts

-

10k+ parts

-

4,560

$5.418

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-

-

Digiode

USA . 1,757 parts In-Stock

1+ parts

$8.645

100+ parts

-

1k+ parts

-

10k+ parts

-

1,757

$8.645

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Vyrian

USA . 4,610 parts In-Stock

1+ parts

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4,610

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,139 parts In-Stock

1+ parts

$8.190

100+ parts

-

1k+ parts

-

10k+ parts

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1,139

$8.190

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Corohmni

South Africa . 204 parts In-Stock

1+ parts

$9.100

100+ parts

-

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204

$9.100

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AZTECH Wire

Italy . 1,020 parts In-Stock

1+ parts

$11.810

100+ parts

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1,020

$11.810

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TANS Electronics

Latvia . 6,103 parts In-Stock

1+ parts

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6,103

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Problanco Electronics

Mexico . 5,056 parts In-Stock

1+ parts

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100+ parts

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5,056

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Kulean Microsystems

USA . 1,755 parts In-Stock

1+ parts

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1,755

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SupplyDigital Components

Austria . 760 parts In-Stock

1+ parts

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760

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UHIMA Technologies

Türkiye . 49 parts In-Stock

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49

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Overview

Capture every moment with the MT9V136C12STC-DR Image Sensor by Onsemi. Known for their high-quality products, Onsemi delivers top-of-the-line image sensors that provide exceptional clarity and precision in various applications. Whether you're looking to enhance your security systems, improve medical imaging technology, or elevate your automotive cameras, this sensor offers unparalleled value and performance. Trust Onsemi to bring innovation and reliability to your imaging solutions with the MT9V136C12STC-DR.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

Smaller pixel size allows for higher resolution images to be captured

Maximum Supply Voltage: 1.9 V

Efficient power consumption and compatibility with various systems

Master Clock: 27 MHz

Provides precise timing for capturing images

Body Width: 11.43 inch

Compact size for easy integration into devices

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology offers high-quality image capture and low power consumption

Body Height: 2.25 mm

Slim profile for fitting into thin devices

Package Shape or Style: SQUARE

Standard package shape for easy mounting and handling

Minimum Supply Voltage: 1.7 V

Ensures the sensor operates efficiently at lower power levels

Maximum Operating Temperature: 70 °C

Wide operating temperature range for versatile use

Horizontal Pixel: 680

High pixel count for detailed image capture

Output Type: DIGITAL CURRENT

Provides digital output for easy integration with digital systems

Minimum Operating Temperature: -30 °C

Can operate in harsh cold environments without issues

Maximum Operating Current: 50 mA

Low power consumption during operation

Housing: CERAMIC

Durable and heat-resistant housing material

Dynamic Range: 74.6 dB

Offers a wide dynamic range for capturing diverse lighting conditions

Vertical Pixel: 512

High vertical pixel count for detailed images

Body Length/Diameter: 11.43 mm

Compact size for easy integration into devices

Optical Format (inch): 1/4

Standard optical format for compatibility with lenses and image processing algorithms

Termination Type: SOLDER

Secure termination method for reliable connections

Output Interface Type: 2-WIRE INTERFACE

Easy interface for connecting to other devices

Frame Rate: 30 fps

Smooth video capture at 30 frames per second

Array Type: FRAME

Array design for capturing full frames

Mounting Feature: SURFACE MOUNT

Simple and easy mounting onto PCBs

Technical Specifications

Image Sensors MT9V136C12STC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.25 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

74.6 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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