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KAF-09001-ABA-DP-AE

Onsemi

KAF-09001-ABA-DP-AE by Onsemi

The Onsemi KAF-09001-ABA-DP-AE is a CCD image sensor with 3024x3024 pixels, 12x12 um pixel size, and 84 dB dynamic range. It operates b/w -50 to 60 °C, with a supply voltage range of 14.8V to 17V. Ideal for high-resolution imaging applications in industries like surveillance, astronomy, and medical imaging.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 425 parts In-Stock

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SupplyDigital Components

Austria . 7,737 parts In-Stock

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Problanco Electronics

Mexico . 5,043 parts In-Stock

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Kulean Microsystems

USA . 2,012 parts In-Stock

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TANS Electronics

Latvia . 1,282 parts In-Stock

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Corphita

USA . 621 parts In-Stock

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Corohmni

South Africa . 285 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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Overview

Enhance your imaging capabilities with the KAF-09001-ABA-DP-AE by Onsemi. As a leading manufacturer of high-quality image sensors, Onsemi delivers top-notch performance and reliability. Ideal for a wide range of applications, this CCD image sensor offers exceptional value with its impressive dynamic range and high-resolution capabilities. Unlock new possibilities in your imaging projects with the KAF-09001-ABA-DP-AE - the perfect choice for those seeking superior quality and functionality.

Feature Benefit Bullets

Pixel Size (um): 12X12

High resolution pixel size ensures sharp and detailed images.

Maximum Supply Voltage: 17 V

Allows for reliable power supply and performance.

Body Width: 51.25 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD technology provides high-quality image capture and accuracy.

Body Height: 3.45 mm

Low profile design for space-saving installations.

Package Shape or Style: RECTANGULAR

Sleek rectangular shape for easy mounting and aesthetics.

Minimum Supply Voltage: 14.8 V

Efficient power consumption and reduced energy costs.

Maximum Operating Temperature: 60 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 3024

High pixel count for detailed imaging and accurate reproduction of visuals.

Output Type: CURRENT OUTPUT

Stable current output for consistent and reliable data transmission.

Minimum Operating Temperature: -50 °C

Can withstand low temperatures for use in challenging conditions.

Housing: CERAMIC

Durable ceramic housing for protection and longevity.

Dynamic Range: 84 dB

Wide dynamic range for capturing both bright and dark details in images.

Vertical Pixel: 3024

High resolution in both horizontal and vertical dimensions for clear images.

Body Length/Diameter: 63.8 mm

Optimal size for balance between performance and compactness.

Termination Type: SOLDER

Efficient solder termination for secure connections.

Array Type: FULL FRAME

Full-frame array for comprehensive image capture without cropping.

Mounting Feature: THROUGH HOLE MOUNT

Easy and secure mounting using through-hole mount method.

Technical Specifications

Image Sensors KAF-09001-ABA-DP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A OUTPUT SENSITIVITY OF 24 MICROVOLT PER ELECTRON; IT ALSO OPERATES AT DYNAMIC RANGE 75 DB AT 20 MHZ LINEAR

Array Type:

FULL FRAME

Body Width:

51.25 inch

Body Height:

3.45 mm

Body Length/Diameter:

63.8 mm

Dynamic Range:

84 dB

Horizontal Pixel:

3024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.8 V

Termination Type:

SOLDER

Vertical Pixel:

3024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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