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MT9V113M02

Onsemi

MT9V113M02 by Onsemi

The Onsemi MT9V113M02 is a CMOS image sensor with 2.2x2.2 um pixel size, offering 640x480 resolution and 67 dB dynamic range. It operates b/w -15 to 40 °C, with digital output via a 2-wire interface, making it ideal for applications requiring high-quality imaging in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 713 parts In-Stock

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Digiode

USA . 653 parts In-Stock

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TANS Electronics

Latvia . 7,909 parts In-Stock

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Problanco Electronics

Mexico . 7,199 parts In-Stock

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SupplyDigital Components

Austria . 4,199 parts In-Stock

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Kulean Microsystems

USA . 2,508 parts In-Stock

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Corphita

USA . 2,406 parts In-Stock

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Corohmni

South Africa . 241 parts In-Stock

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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Overview

Enhance your imaging capabilities with the MT9V113M02 by Onsemi, a cutting-edge image sensor designed to deliver superior performance and unmatched quality. Manufactured by industry leader Onsemi, this sensor boasts a wide range of applications in various industries, providing crystal-clear images with incredible detail. Experience the value and benefits of this product as it offers unparalleled advantages for your imaging needs. Upgrade your technology with the MT9V113M02 and revolutionize the way you capture and process visual data.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Provides high resolution images with clear details.

Maximum Supply Voltage: 1.95 V

Ensures stable and efficient power supply.

Body Width: 4.15 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology for low power consumption and high performance.

Package Shape or Style: SQUARE

Sleek and modern design for aesthetic appeal.

Maximum Operating Temperature: 40 °C

Can function under high temperature conditions without overheating.

Output Type: DIGITAL OUTPUT

Easy compatibility with digital devices for seamless data transfer.

Minimum Operating Temperature: -15 °C

Operates in cold environments without loss of functionality.

Dynamic Range: 67 dB

Captures a wide range of light levels for detailed images.

Vertical Pixel: 480

Provides high vertical resolution for crisp images.

Optical Format (inch): 1/11

Standard optical format for compatibility with various lenses.

Output Interface Type: 2-WIRE INTERFACE

Simple interface for easy connection to other devices.

Frame Rate: 30 fps

Captures smooth and clear video footage at 30 frames per second.

Array Type: FRAME

Efficiently organizes pixels for optimal image processing.

Mounting Feature: SURFACE MOUNT

Easy installation on flat surfaces for versatile use.

Technical Specifications

Image Sensors MT9V113M02 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

4.15 inch

Body Height:

2.5 mm

Body Length/Diameter:

4.15 mm

Dynamic Range:

67 dB

Frame Rate:

30 fps

Horizontal Pixel:

640

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

-15 Cel

Optical Format (inch):

1/11

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

480

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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