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MT9V128IA3XTC-DR

Onsemi

MT9V128IA3XTC-DR by Onsemi

MT9V128IA3XTC-DR by Onsemi is a 5.6x5.6 um CMOS image sensor with 680H x 512V pixels, offering a dynamic range of 74.8 dB and operating at temperatures from -40 to 105°C. It features a digital voltage output interface, operates at 27 MHz master clock, and is ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

$17.620

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 73 parts In-Stock

1+ parts

$20.980

100+ parts

$17.114

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73

$20.980

$17.114

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Rochester

USA . 2,210 parts In-Stock

1+ parts

-

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$14.260

1k+ parts

$12.760

10k+ parts

$12.010

2,210

-

$14.260

$12.760

$12.010

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,285 parts In-Stock

1+ parts

$15.096

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1,285

$15.096

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Nova Conductors

Japan . 900 parts In-Stock

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$16.019

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900

$16.019

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Vyrian

USA . 3,053 parts In-Stock

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3,053

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Semicontronic

India . 1,054 parts In-Stock

1+ parts

$13.510

100+ parts

$13.172

1k+ parts

$13.105

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1,054

$13.510

$13.172

$13.105

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Ampacity Inc.

Singapore . 916 parts In-Stock

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$13.510

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916

$13.510

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Corphita

USA . 1,603 parts In-Stock

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$14.301

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1,603

$14.301

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Corohmni

South Africa . 108 parts In-Stock

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$15.699

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108

$15.699

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Continental Prestige Electronics

USA . 596 parts In-Stock

1+ parts

$16.019

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$15.699

596

$16.019

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$15.699

Netroflash

USA . 500 parts In-Stock

1+ parts

$16.019

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$15.699

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500

$16.019

$15.699

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Lixinc

USA . 15,221 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,293 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 5,386 parts In-Stock

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SupplyDigital Components

Austria . 4,743 parts In-Stock

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Argo Parts USA

USA . 3,192 parts In-Stock

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Futuretech Components

Singapore . 2,600 parts In-Stock

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Kulean Microsystems

USA . 2,384 parts In-Stock

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2,384

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TANS Electronics

Latvia . 1,444 parts In-Stock

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UHIMA Technologies

Türkiye . 583 parts In-Stock

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583

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Overview

Capture every detail with the Onsemi MT9V128IA3XTC-DR Image Sensor. Known for its superior quality and cutting-edge technology, Onsemi delivers top-notch products that exceed expectations. This image sensor is perfect for applications where precision and clarity are essential, providing crisp images with a dynamic range of 74.8 dB. With a maximum operating temperature of 105°C and a frame rate of 60 fps, this sensor offers unmatched performance and reliability. Elevate your projects with the Onsemi MT9V128IA3XTC-DR Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 5.6X5.6

Higher pixel size allows for more light to be captured, resulting in clearer and sharper images.

Maximum Supply Voltage: 1.9 V

Allows for efficient power usage and minimizes the risk of damage due to overvoltage.

Master Clock: 27 MHz

High master clock frequency ensures fast and accurate image data processing.

Body Width: 9 inch

Wide body width provides stability and durability to the image sensor.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers high-quality imaging with low power consumption.

Body Height: 1.4 mm

Low body height allows for compact design and easy integration into various devices.

Package Shape or Style: SQUARE

Square package shape provides easy installation and a secure fit in the device.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 105 °C

Wide operating temperature range ensures the sensor can perform reliably in various environments.

Horizontal Pixel: 680

Higher horizontal pixel count allows for increased image resolution and detail.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies data transmission and integration with other digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures the sensor remains functional even in cold conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Terminal finish options provide corrosion resistance and enhance the sensor's reliability.

Maximum Operating Current: 50 mA

Low operating current helps in reducing power consumption and heat generation.

Dynamic Range: 74.8 dB

High dynamic range enables the sensor to capture a wide range of light intensity levels accurately.

Vertical Pixel: 512

Higher vertical pixel count contributes to better image quality and detail.

Body Length/Diameter: 9 mm

Compact body length makes the sensor suitable for small and slim device designs.

Optical Format (inch): 1/4

Standard 1/4 inch optical format provides compatibility with a wide range of lenses and imaging systems.

Termination Type: SOLDER

Solder termination offers a reliable and secure connection for the sensor in the device.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies communication and control of the sensor with external devices.

Frame Rate: 60 fps

High frame rate ensures smooth and real-time image capture, ideal for fast-moving subjects.

Array Type: FRAME

Frame array type allows for capturing multiple frames at once, enhancing image processing capabilities.

Mounting Feature: SURFACE MOUNT

Surface mount option simplifies the installation process and ensures a secure mounting of the sensor.

Technical Specifications

Image Sensors MT9V128IA3XTC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.4 mm

Body Length/Diameter:

9 mm

Dynamic Range:

74.8 dB

Frame Rate:

60 fps

Horizontal Pixel:

680

JESD-609 Code:

e1

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

5.6X5.6

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

512

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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