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MT9V111D00STC

Onsemi

MT9V111D00STC by Onsemi

The Onsemi MT9V111D00STC image sensor features a pixel size of 5.60x5.60 um, operates at a max supply voltage of 3.05 V, and has a master clock of 27 MHz. This CMOS sensor is commonly used in applications requiring digital voltage output interfaces, with an optical format of 1/4 inch and a frame rate of 15 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Vyrian

USA . 3,658 parts In-Stock

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Digiode

USA . 2,967 parts In-Stock

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GreenTree Electronics

Israel . 16,200 parts In-Stock

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SupplyDigital Components

Austria . 7,477 parts In-Stock

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Corphita

USA . 3,912 parts In-Stock

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Problanco Electronics

Mexico . 3,662 parts In-Stock

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Kulean Microsystems

USA . 1,575 parts In-Stock

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TANS Electronics

Latvia . 417 parts In-Stock

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Corohmni

South Africa . 311 parts In-Stock

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UHIMA Technologies

Türkiye . 115 parts In-Stock

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Overview

Capture the world with crystal clear precision using the MT9V111D00STC image sensor by Onsemi. Crafted with excellence and innovation, this sensor provides unparalleled quality and reliability for a wide range of applications. From security cameras to medical imaging devices, this sensor delivers exceptional performance and accuracy. Experience the value of sharper images, faster processing, and superior functionality with the MT9V111D00STC. Join the future of imaging technology and elevate your projects to new heights with this cutting-edge sensor.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

The small pixel size allows for high resolution image capture, resulting in clear and detailed images.

Maximum Supply Voltage: 3.05 V

The higher maximum supply voltage ensures reliable and stable operation of the image sensor.

Master Clock: 27 MHz

The high master clock frequency enables fast readout of image data, improving overall performance.

Package Shape or Style: SQUARE

The square package shape provides a compact and space-efficient design for easy integration into various devices.

Dynamic Range: 60 dB

The wide dynamic range allows the image sensor to capture both bright and dark details in the same scene, resulting in high-quality images.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices, making the integration process more convenient.

Technical Specifications

Image Sensors MT9V111D00STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

LINEAR

Body Width:

7 inch

Body Height:

1.27 mm

Body Length/Diameter:

7 mm

Dynamic Range:

60 dB

Frame Rate:

15 fps

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

25 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

3.05 V

Minimum Supply Voltage:

2.55 V

Termination Type:

SOLDER

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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