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KAI-04050-ABA-JP-AE

Onsemi

KAI-04050-ABA-JP-AE by Onsemi

KAI-04050-ABA-JP-AE by Onsemi is a 5.5x5.5um CCD image sensor with 2336H x 1752V pixels, offering a dynamic range of 64dB. It features an interline array type and solder termination, suitable for applications requiring high-quality imaging in industrial and scientific fields.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,856 parts In-Stock

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Digiode

USA . 1,623 parts In-Stock

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Distributors (Availability)

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SupplyDigital Components

Austria . 3,008 parts In-Stock

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Problanco Electronics

Mexico . 2,162 parts In-Stock

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Corphita

USA . 1,565 parts In-Stock

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TANS Electronics

Latvia . 1,031 parts In-Stock

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Kulean Microsystems

USA . 324 parts In-Stock

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Corohmni

South Africa . 318 parts In-Stock

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UHIMA Technologies

Türkiye . 186 parts In-Stock

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Overview

Explore the world of crystal-clear imaging with the KAI-04050-ABA-JP-AE by Onsemi. As a leading manufacturer in the industry, Onsemi is dedicated to providing top-quality Image Sensors that are perfect for a wide range of applications. Whether you're capturing stunning landscapes or documenting precious memories, this sensor offers unparalleled precision and clarity. Say goodbye to blurry photos and hello to vibrant, lifelike images. Upgrade your imaging experience with Onsemi's KAI-04050-ABA-JP-AE today!

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for high resolution images with clear and detailed visuals.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD sensors ensures high-quality image capture and accurate color reproduction.

Package Shape or Style: RECTANGULAR

The rectangular shape makes the sensor easy to integrate into various devices or systems.

Horizontal Pixel: 2336

A high pixel count horizontally results in sharp and wide images with great detail.

Dynamic Range: 64 dB

The wide dynamic range allows the sensor to capture both bright and dark areas accurately in the same image.

Vertical Pixel: 1752

The high vertical pixel count contributes to the overall resolution and clarity of the images captured.

Termination Type: SOLDER

The solder termination ensures a secure and reliable connection for enhanced durability.

Array Type: INTERLINE

The interline array type offers fast readout speeds and reduced image lag, suitable for capturing moving objects.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting option provides stability and ease of installation in various electronic devices or applications.

Technical Specifications

Image Sensors KAI-04050-ABA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Dynamic Range:

64 dB

Horizontal Pixel:

2336

Mounting Feature:

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Termination Type:

SOLDER

Vertical Pixel:

1752

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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