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AS0142ATSC00XUSM0-TRBR-E

Onsemi

AS0142ATSC00XUSM0-TRBR-E by Onsemi

AS0142ATSC00XUSM0-TRBR-E by Onsemi is a 3x3 um CMOS image sensor with 1280H x 800V pixels, offering a dynamic range of 93 dB. Operating at -40 to 105 °C, it has a digital voltage output interface and supports a frame rate of 60 fps. Ideal for applications requiring high-quality imaging in compact devices.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

USA . 1,187 parts In-Stock

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Kulean Microsystems

USA . 7,699 parts In-Stock

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Problanco Electronics

Mexico . 3,646 parts In-Stock

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TANS Electronics

Latvia . 3,304 parts In-Stock

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SupplyDigital Components

Austria . 2,328 parts In-Stock

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Corphita

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Northwest PG Solutions

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Corohmni

South Africa . 393 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 116 parts In-Stock

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Overview

Capture stunning images with the AS0142ATSC00XUSM0-TRBR-E by Onsemi, a leading manufacturer known for top-quality image sensors. This innovative device offers unparalleled performance and reliability, making it ideal for a wide range of applications. From security systems to automotive cameras, this sensor provides crystal-clear images with exceptional detail. Trust Onsemi to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your imaging needs. Experience the difference with the AS0142ATSC00XUSM0-TRBR-E.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution and better image quality.

Maximum Supply Voltage: 1.89 V

Allows for higher power supply, ensuring proper functioning of the image sensor.

Master Clock: 27 MHz

Higher master clock frequency results in faster data processing and better performance.

Body Width: 8.5 inch

Compact body width makes it suitable for various applications and easy integration.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS sensors provide high sensitivity and low noise, resulting in clear and accurate image capture.

Package Shape or Style: SQUARE

Square package shape is easy to mount and provides stability during operation.

Minimum Supply Voltage: 1.71 V

Low minimum supply voltage ensures energy efficiency and prolonged battery life.

Maximum Operating Temperature: 105 °C

Wide temperature range allows for operation in harsh environments.

Horizontal Pixel: 1280

High horizontal pixel count results in detailed images with sharpness and clarity.

Output Range: 0.36-1.44V

Wide output voltage range provides flexibility in signal processing and compatibility with various systems.

Output Type: DIGITAL VOLTAGE

Digital output voltage ensures accurate and reliable data transmission.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for use in cold environments without performance degradation.

Housing: PLASTIC

Plastic housing is lightweight, durable, and cost-effective.

Dynamic Range: 93 dB

High dynamic range allows for capturing details in both bright and dark areas of the image.

Vertical Pixel: 800

High vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 8.5 mm

Compact body length/diameter facilitates installation and integration into space-constrained devices.

Optical Format (inch): 1/4

1/4 inch optical format is a common standard and ensures compatibility with various lenses and systems.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for signal transmission.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other devices.

Frame Rate: 60 fps

High frame rate enables smooth and fluid video capture.

Array Type: FRAME

Frame array design allows for capturing complete images in a single frame.

Mounting Feature: SURFACE MOUNT

Surface mount feature makes installation and mounting of the image sensor easy and convenient.

Technical Specifications

Image Sensors AS0142ATSC00XUSM0-TRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

8.5 inch

Body Height:

1.57 mm

Body Length/Diameter:

8.5 mm

Dynamic Range:

93 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.89 V

Minimum Supply Voltage:

1.71 V

Termination Type:

SOLDER

Vertical Pixel:

800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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