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KAF-09000-ABA-DD-AE

Onsemi

KAF-09000-ABA-DD-AE by Onsemi

The Onsemi KAF-09000-ABA-DD-AE is a 3056x3056 pixel CCD image sensor with 12x12 um pixel size. It operates b/w -60 to 60 °C and offers a dynamic range of 84 dB. Ideal for high-resolution imaging applications, it features a spectral response of 300-1100 nm and data rate of 10 Mbps.

Median Price

$2.568

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 15 parts In-Stock

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$2.568

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Digiode

USA . 2,500 parts In-Stock

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Vyrian

USA . 1,647 parts In-Stock

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TANS Electronics

Latvia . 7,563 parts In-Stock

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SupplyDigital Components

Austria . 7,334 parts In-Stock

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Kulean Microsystems

USA . 6,601 parts In-Stock

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Problanco Electronics

Mexico . 2,706 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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UHIMA Technologies

Türkiye . 130 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Corphita

USA . 78 parts In-Stock

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Overview

Capture stunning images with the Onsemi KAF-09000-ABA-DD-AE Image Sensor. Crafted by a trusted manufacturer, this sensor guarantees top-notch quality and reliability. Ideal for a wide range of applications, this sensor offers unmatched value and benefits to customers. Whether you're a professional photographer or a hobbyist, this sensor provides exceptional performance and clarity in every shot. Upgrade your imaging experience today with the Onsemi KAF-09000-ABA-DD-AE Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 12X12

The small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 17 V

The high maximum supply voltage ensures reliable performance and stability.

Body Width: 50.8 inch

The compact body width makes the sensor suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR, CCD

The use of CCD image sensor technology provides high-quality images with low noise levels.

Package Shape or Style: SQUARE

The square shape of the package allows for easy integration into different systems and setups.

Minimum Supply Voltage: 14.8 V

The low minimum supply voltage helps in reducing power consumption and heat generation.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature ensures the sensor can withstand harsh environmental conditions.

Horizontal Pixel: 3056

The high horizontal pixel count allows for capturing wide and detailed images.

Minimum Operating Temperature: -60 °C

The low minimum operating temperature ensures the sensor can function in extreme cold conditions.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensor components.

Dynamic Range: 84 dB

The high dynamic range enables the sensor to capture both bright and dark areas accurately.

Vertical Pixel: 3056

The high vertical pixel count allows for capturing detailed images with depth and clarity.

Body Length/Diameter: 50.8 mm

The compact body length/diameter makes the sensor easy to handle and install.

Spectral Response (nm): 300-1100

The wide spectral response range enables the sensor to capture a broad range of wavelengths.

Data Rate: 10 Mbps

The high data rate allows for fast and efficient transfer of image data.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections for long-term use.

Array Type: FULL FRAME

The full-frame array type provides uniform image quality across the entire sensor surface.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable installation of the sensor in various setups.

Technical Specifications

Image Sensors KAF-09000-ABA-DD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 24 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Body Width:

50.8 inch

Body Length/Diameter:

50.8 mm

Data Rate:

10 Mbps

Dynamic Range:

84 dB

Horizontal Pixel:

3056

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-60 Cel

Package Shape or Style:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Spectral Response (nm):

300-1100

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.8 V

Termination Type:

SOLDER

Vertical Pixel:

3056

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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