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KAF-0261-AAA-CP-BA

Onsemi

KAF-0261-AAA-CP-BA by Onsemi

The Onsemi KAF-0261-AAA-CP-BA is a CCD image sensor with 512x512 pixels, 20x20 um pixel size, and 87 dB dynamic range. It operates b/w -70 to 50 °C and has a spectral response of 400-1000 nm. Ideal for applications requiring high-quality imaging in industrial or scientific settings.

Median Price

$1,047.100

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1 parts In-Stock

1+ parts

$837.680

100+ parts

$787.420

1k+ parts

$737.160

10k+ parts

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1

$837.680

$787.420

$737.160

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DigiKey

USA . 1 parts In-Stock

1+ parts

$1,047.100

100+ parts

-

1k+ parts

-

10k+ parts

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1

$1,047.100

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-

-

Verical

USA . 1 parts In-Stock

1+ parts

$1,047.100

100+ parts

$984.275

1k+ parts

$921.450

10k+ parts

-

1

$1,047.100

$984.275

$921.450

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,332 parts In-Stock

1+ parts

$926.326

100+ parts

-

1k+ parts

-

10k+ parts

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2,332

$926.326

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Vyrian

USA . 3,055 parts In-Stock

1+ parts

-

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3,055

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 1 parts In-Stock

1+ parts

$785.910

100+ parts

-

1k+ parts

-

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1

$785.910

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-

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Corphita

USA . 548 parts In-Stock

1+ parts

$877.572

100+ parts

-

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-

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548

$877.572

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-

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Corohmni

South Africa . 290 parts In-Stock

1+ parts

$975.080

100+ parts

-

1k+ parts

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10k+ parts

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290

$975.080

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Problanco Electronics

Mexico . 7,389 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,389

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Kulean Microsystems

USA . 1,842 parts In-Stock

1+ parts

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1,842

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SupplyDigital Components

Austria . 582 parts In-Stock

1+ parts

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582

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UHIMA Technologies

Türkiye . 337 parts In-Stock

1+ parts

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337

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TANS Electronics

Latvia . 190 parts In-Stock

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190

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Overview

Experience unparalleled image quality and precision with the KAF-0261-AAA-CP-BA by Onsemi. As a leading manufacturer in the industry, Onsemi consistently delivers cutting-edge technology that exceeds expectations. This image sensor is perfect for applications requiring high-resolution imaging, such as surveillance systems, digital cameras, and scientific instruments. With its exceptional dynamic range and spectral response, this product ensures crystal-clear images every time. Trust Onsemi to provide you with top-of-the-line solutions that bring value, benefits, and advantages to your projects.

Feature Benefit Bullets

Pixel Size (um): 20X20

The small pixel size allows for high resolution images to be captured, making this image sensor ideal for applications requiring fine details.

Maximum Supply Voltage: 17.5 V

The high maximum supply voltage provides flexibility in power supply options and ensures stable performance under varying voltage conditions.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their excellent image quality and low noise performance, making them suitable for high-end imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy integration into electronic systems and provides a compact form factor for space-constrained designs.

Minimum Supply Voltage: 15 V

The low minimum supply voltage ensures efficient power consumption and allows for operation in lower power environments.

Maximum Operating Temperature: 50 °C

The high maximum operating temperature range makes this image sensor suitable for use in a wide range of environmental conditions without sacrificing performance.

Horizontal Pixel: 512

The high number of horizontal pixels provides detailed image capture and allows for high-resolution images to be produced.

Minimum Operating Temperature: -70 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments, making this image sensor versatile in various applications.

Housing: CERAMIC

The ceramic housing provides durability and thermal stability, protecting the image sensor components and prolonging its lifespan.

Dynamic Range: 87 dB

The high dynamic range allows for accurate image capture in high-contrast scenes, making this image sensor suitable for diverse lighting conditions.

Vertical Pixel: 512

The high number of vertical pixels complements the horizontal pixel count, leading to detailed and high-resolution images.

Spectral Response (nm): 400-1000

The wide spectral response range enables this image sensor to capture a broad range of wavelengths, making it versatile for various imaging applications.

Data Rate: 5 Mbps

The high data rate allows for fast and efficient data transfer, enabling real-time image capture and processing in applications that require quick response times.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable signal transmission, making this image sensor suitable for demanding applications where connectivity is crucial.

Array Type: FULL FRAME

The full-frame array type provides a larger image sensor area, allowing for more light to be captured and resulting in improved image quality and sensitivity.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature allows for easy and secure installation of the image sensor onto a PCB, ensuring stability and accuracy in imaging applications.

Technical Specifications

Image Sensors KAF-0261-AAA-CP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 10 MICRO VOLT PER ELECTRON

Array Type:

FULL FRAME

Data Rate:

5 Mbps

Dynamic Range:

87 dB

Horizontal Pixel:

512

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

50 Cel

Minimum Operating Temperature:

-70 Cel

Package Shape or Style:

Pixel Size (um):

20X20

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

17.5 V

Minimum Supply Voltage:

15 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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