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MT9D115EB3STC-CR

Onsemi

MT9D115EB3STC-CR by Onsemi

MT9D115EB3STC-CR by Onsemi is an image sensor with 1.75x1.75 um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates at a max supply voltage of 1.95 V and has a master clock of 85 MHz. This CMOS sensor with a dynamic range of 63.9 dB is ideal for digital imaging applications requiring a frame rate of up to 15 fps.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,416 parts In-Stock

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Vyrian

USA . 1,076 parts In-Stock

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Kepictronics

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 4,860 parts In-Stock

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Kulean Microsystems

USA . 3,507 parts In-Stock

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TANS Electronics

Latvia . 2,167 parts In-Stock

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Problanco Electronics

Mexico . 663 parts In-Stock

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Corohmni

South Africa . 404 parts In-Stock

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UHIMA Technologies

Türkiye . 331 parts In-Stock

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Corphita

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Overview

Capture every moment in stunning detail with the MT9D115EB3STC-CR image sensor by Onsemi. Known for their high-quality products, Onsemi delivers exceptional performance and reliability. Ideal for a wide range of applications, this image sensor offers unparalleled value and benefits to customers. From security cameras to smartphones, this sensor provides crystal-clear images with a dynamic range of 63.9 dB. Trust Onsemi and elevate your imaging experience with the MT9D115EB3STC-CR.

Feature Benefit Bullets

Pixel Size (um): 1.75X1.75

The small pixel size allows for high resolution images to be captured with detail and clarity.

Maximum Supply Voltage: 1.95 V

The higher supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 85 MHz

A high master clock speed of 85 MHz allows for fast data processing and imaging capabilities.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high image quality, making them a popular choice for various applications.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage helps in reducing power consumption while maintaining performance.

Horizontal Pixel: 1600

The high number of horizontal pixels results in detailed and sharp images with high resolution.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with other digital systems.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

The use of high-quality terminal finishes ensures reliable connections and durability of the image sensor.

Maximum Operating Current: 70 mA

The low operating current helps in reducing power consumption and heat generation during operation.

Dynamic Range: 63.9 dB

A high dynamic range allows the image sensor to capture a wide range of brightness levels, resulting in high-quality images with details in both highlights and shadows.

Vertical Pixel: 1200

The high number of vertical pixels contributes to the overall resolution and clarity of the captured images.

Optical Format (inch): 1/5

The optical format of 1/5 inch provides a good balance between compact size and image quality for various applications.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with external systems for easy integration.

Frame Rate: 15 fps

A frame rate of 15 fps allows for smooth and fluid video capture, suitable for many applications.

Array Type: FRAME

The frame array type ensures efficient utilization of pixels for capturing images, resulting in high-quality output.

Technical Specifications

Image Sensors MT9D115EB3STC-CR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Dynamic Range:

63.9 dB

Frame Rate:

15 fps

Horizontal Pixel:

1600

JESD-609 Code:

e1

Master Clock:

85 MHz

Maximum Operating Current:

70 mA

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

1.75X1.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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