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MT9D131C12STC-DP

Onsemi

MT9D131C12STC-DP by Onsemi

Onsemi's MT9D131C12STC-DP is a 1/3 inch CMOS image sensor with 1280x1024 pixels, offering a dynamic range of 71 dB. Operating at 15 fps, it has a pixel size of 3.6x3.6 um and output range of 0.30-2.50V. Ideal for applications requiring high-resolution imaging in industrial automation and surveillance systems.

Median Price

$28.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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DigiKey

USA . 2,263 parts In-Stock

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Vyrian

USA . 8,697 parts In-Stock

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Digiode

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USA . 1,670 parts In-Stock

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Corohmni

South Africa . 288 parts In-Stock

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Kulean Microsystems

USA . 8,331 parts In-Stock

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Problanco Electronics

Mexico . 7,968 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 3,130 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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Perfect Parts

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Overview

Capture every moment in stunning detail with the MT9D131C12STC-DP image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that exceed expectations. This CMOS image sensor offers unparalleled performance and reliability, making it the perfect choice for a wide range of applications. From security cameras to medical imaging devices, this sensor provides crisp, clear images with a dynamic range of 71 dB. Trust Onsemi to bring your vision to life with the MT9D131C12STC-DP.

Feature Benefit Bullets

Pixel Size (um): 3.6X3.6

Provides high resolution images with fine details.

Maximum Supply Voltage: 3.1 V

Ensures safe operating conditions for the sensor.

Master Clock: 54 MHz

Allows for high-speed data processing and image capture.

Body Width: 11.43 inch

Compact size for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology provides low power consumption and high image quality.

Package Shape or Style: SQUARE

Simplifies mounting and integration into systems.

Minimum Supply Voltage: 2.5 V

Allows for flexibility in power supply options.

Maximum Operating Temperature: 70 °C

Suitable for operation in various environments.

Horizontal Pixel: 1280

Provides high-resolution, detailed images.

Output Range: 0.30-2.50V

Wide output range for capturing various light levels.

Output Type: DIGITAL VOLTAGE

Easily readable and compatible with digital systems.

Minimum Operating Temperature: -30 °C

Allows for operation in low-temperature conditions.

Maximum Operating Current: 110 mA

Efficient power consumption for extended operation.

Housing: CERAMIC

Durable and reliable housing material.

Dynamic Range: 71 dB

Captures a wide range of light intensities with good detail.

Vertical Pixel: 1024

High resolution for capturing vertical details.

Body Length/Diameter: 11.43 mm

Compact size for easy integration and mounting.

Optical Format (inch): 1/3

Standard format for compatibility with existing systems.

Termination Type: SOLDER

Secure and reliable connection method.

Output Interface Type: 2-WIRE INTERFACE

Easy integration with other components and systems.

Frame Rate: 15 fps

Suitable for capturing real-time video or fast-moving scenes.

Array Type: FRAME

Organized array for efficient image capture and processing.

Sensitivity (V/lx.s): 1 V/lx.s

High sensitivity for capturing low light scenes.

Mounting Feature: SURFACE MOUNT

Easy and secure mounting option for various applications.

Technical Specifications

Image Sensors MT9D131C12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

71 dB

Frame Rate:

15 fps

Horizontal Pixel:

1280

Housing:

CERAMIC

Master Clock:

54 MHz

Mounting Feature:

Maximum Operating Current:

110 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.6X3.6

Sensitivity (V/lx.s):

1 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

3.1 V

Minimum Supply Voltage:

2.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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