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MT9D012D00STC

Onsemi

MT9D012D00STC by Onsemi

The Onsemi MT9D012D00STC image sensor features 2.2x2.2 um pixel size, 27 MHz master clock, and 1/4 inch optical format. With a resolution of 1600x1200 pixels, it is ideal for applications requiring high-quality digital output at up to 60 fps frame rate in a temperature range of -30 to 70 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,583 parts In-Stock

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Digiode

USA . 1,307 parts In-Stock

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TANS Electronics

Latvia . 3,452 parts In-Stock

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SupplyDigital Components

Austria . 1,897 parts In-Stock

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Corphita

USA . 1,299 parts In-Stock

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Problanco Electronics

Mexico . 1,296 parts In-Stock

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Kulean Microsystems

USA . 608 parts In-Stock

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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Corohmni

South Africa . 383 parts In-Stock

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Overview

Enhance your imaging solutions with the MT9D012D00STC by Onsemi. As a leading manufacturer in the industry, Onsemi's image sensors offer unparalleled quality and reliability. This sensor's advanced technology provides crystal-clear images, making it ideal for a wide range of applications. Whether you're capturing breathtaking landscapes or detailed close-ups, this product delivers exceptional performance. Trust Onsemi to bring innovation and excellence to your imaging projects. Elevate your visuals with the MT9D012D00STC today!

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for high resolution imaging and detailed capturing of images.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage for efficient power consumption and reduced heat generation.

Master Clock: 27 MHz

High master clock frequency enables fast processing of image data.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology provides high-quality image output with low power consumption.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures that the sensor can operate efficiently even at low power supply levels.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1600

High horizontal pixel count enables high-resolution and sharp image capturing.

Output Type: DIGITAL OUTPUT

Digital output for easy integration with digital systems and processing units.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures reliable performance even in cold environments.

Dynamic Range: 59.5 dB

High dynamic range allows for capturing images with a wide range of brightness levels without losing details.

Vertical Pixel: 1200

High vertical pixel count enhances the detailed capturing of images in the vertical axis.

Optical Format (inch): 1/4

Standard optical format for compatibility with a wide range of lenses and camera systems.

Data Rate: 64 Mbps

High data rate for fast transfer of image data to external systems.

Termination Type: SOLDER

Solder termination for secure and reliable connection in electronic circuits.

Output Interface Type: 2-WIRE INTERFACE

Efficient 2-wire interface for easy connectivity with external devices.

Frame Rate: 60 fps

High frame rate for smooth and real-time image capturing and processing.

Array Type: FRAME

Frame array type for organized and structured image capturing.

Sensitivity (V/lx.s): 0.53 V/lx.s

High sensitivity for accurate and detailed image capturing in low light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure mounting on PCBs and electronic devices.

Technical Specifications

Image Sensors MT9D012D00STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO HAVE ANALOG SUPPLY VOLTAGE 2.4-3.1V

Array Type:

FRAME

Data Rate:

64 Mbps

Dynamic Range:

59.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

1600

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

.53 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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