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MT9D012D00STCC15AC1

Onsemi

MT9D012D00STCC15AC1 by Onsemi

The Onsemi MT9D012D00STCC15AC1 is a CMOS image sensor with 2.2x2.2 um pixel size, 1616 (H) x 1216 (V) resolution, and 59.5 dB dynamic range. It operates at a max supply voltage of 1.9 V and has a master clock of 64 MHz. Ideal for applications requiring high-quality imaging such as surveillance cameras or industrial machine vision systems due to its high resolution and frame rate capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

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1k+

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Digiode

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Vyrian

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TANS Electronics

Latvia . 8,054 parts In-Stock

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Kulean Microsystems

USA . 4,959 parts In-Stock

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Problanco Electronics

Mexico . 2,822 parts In-Stock

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UHIMA Technologies

Türkiye . 649 parts In-Stock

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SupplyDigital Components

Austria . 538 parts In-Stock

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Corohmni

South Africa . 419 parts In-Stock

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Corphita

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Overview

Capture moments in stunning clarity with the MT9D012D00STCC15AC1 by Onsemi. This cutting-edge image sensor delivers unrivaled quality and precision, backed by the trusted reputation of its manufacturer. Ideal for a wide range of applications, this sensor offers customers unparalleled value and benefits. Elevate your projects with the advanced technology and superior performance that only Onsemi can provide.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Smaller pixel size allows for higher resolution and clearer images to be captured.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and extending battery life.

Master Clock: 64 MHz

High master clock speed ensures fast and efficient processing of image data.

Body Width: 5.404 inch

Compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for easy integration into various devices and systems.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures reliable operation even under low power conditions.

Maximum Operating Temperature: 70 °C

Wide operating temperature range makes it suitable for use in various environments.

Horizontal Pixel: 1616

High horizontal pixel count results in detailed and high-resolution images.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature enables operation in extreme cold conditions.

Dynamic Range: 59.5 dB

Wide dynamic range allows for capturing both bright and dark areas with detail.

Vertical Pixel: 1216

High vertical pixel count contributes to the overall image resolution and clarity.

Body Length/Diameter: 6.003 mm

Compact body length/diameter makes it suitable for small and portable devices.

Optical Format (inch): 1/4

Standard optical format makes it compatible with a wide range of lenses and accessories.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and allows for easy integration with other components.

Frame Rate: 60 fps

High frame rate ensures smooth and fluid motion capture in videos and fast-moving scenes.

Array Type: FRAME

Frame array type enables simultaneous capture of multiple frames for advanced imaging applications.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on PCBs and other surfaces.

Technical Specifications

Image Sensors MT9D012D00STCC15AC1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.40-3.10 V

Array Type:

FRAME

Body Width:

5.404 inch

Body Length/Diameter:

6.003 mm

Dynamic Range:

59.5 dB

Frame Rate:

60 fps

Horizontal Pixel:

1616

Master Clock:

64 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1216

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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