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MT9D115D00STCK25AC1-200

Onsemi

MT9D115D00STCK25AC1-200 by Onsemi

Onsemi's MT9D115D00STCK25AC1-200 is a CMOS image sensor with 1.75x1.75 um pixel size, 1600 horizontal pixels, and 1200 vertical pixels. It operates at a max supply voltage of 1.95 V and has a master clock of 85 MHz. This sensor is ideal for applications requiring digital voltage output, offering a dynamic range of 63.9 dB and a frame rate of 15 fps in a compact 1/5-inch optical format.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 7,788 parts In-Stock

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Digiode

USA . 2,076 parts In-Stock

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AZTECH Wire

Italy . 475 parts In-Stock

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Problanco Electronics

Mexico . 6,727 parts In-Stock

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Kulean Microsystems

USA . 2,541 parts In-Stock

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SupplyDigital Components

Austria . 2,157 parts In-Stock

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Corphita

USA . 600 parts In-Stock

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UHIMA Technologies

Türkiye . 552 parts In-Stock

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TANS Electronics

Latvia . 458 parts In-Stock

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Corohmni

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Overview

Capture the world in stunning detail with the MT9D115D00STCK25AC1-200 by Onsemi. As a leading manufacturer in the image sensor category, Onsemi delivers unrivaled quality and reliability. This cutting-edge CMOS image sensor offers customers a wide range of applications, from high-definition cameras to medical imaging equipment. Experience the value and benefits of this product, with its exceptional dynamic range, high frame rate, and digital output interface. Elevate your imaging projects with the MT9D115D00STCK25AC1-200, where every pixel tells a story.

Feature Benefit Bullets

Pixel Size (um): 1.75X1.75

Small pixel size allows for higher resolution and more detailed images to be captured.

Maximum Supply Voltage: 1.95 V

Operates efficiently with a low maximum supply voltage, reducing power consumption.

Master Clock: 85 MHz

High master clock frequency enables fast data readout and processing.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensor technology offers low power consumption and high sensitivity for quality image capture.

Minimum Supply Voltage: 1.7 V

Can operate at a low minimum supply voltage, providing flexibility in power source options.

Horizontal Pixel: 1600

High horizontal pixel count allows for wide and detailed image capture.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies integration with other digital systems and reduces signal interference.

Maximum Operating Current: 70 mA

Operates at a relatively low maximum operating current, contributing to energy efficiency.

Dynamic Range: 63.9 dB

Wide dynamic range allows for capturing a wide range of light intensities with detail and accuracy.

Vertical Pixel: 1200

High vertical pixel count enables capturing detailed images in the vertical dimension.

Optical Format (inch): 1/5

Compact optical format makes it suitable for small and portable devices.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with other systems or devices.

Frame Rate: 15 fps

Decent frame rate ensures smooth video recording and playback.

Array Type: FRAME

Frame array type allows for capturing a complete frame of information at once, aiding in fast image capture.

Technical Specifications

Image Sensors MT9D115D00STCK25AC1-200 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT 2.50-3.10 V ANALOG SUPPLY VOLATGE

Array Type:

FRAME

Dynamic Range:

63.9 dB

Frame Rate:

15 fps

Horizontal Pixel:

1600

Master Clock:

85 MHz

Maximum Operating Current:

70 mA

Optical Format (inch):

1/5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Pixel Size (um):

1.75X1.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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