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KAI-11002-ABA-CP-AE

Onsemi

KAI-11002-ABA-CP-AE by Onsemi

KAI-11002-ABA-CP-AE by Onsemi is an image sensor with 9x9 um pixel size, 4008 horizontal pixels, and 2672 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 66 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,487 parts In-Stock

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Digiode

USA . 540 parts In-Stock

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540

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Problanco Electronics

Mexico . 5,822 parts In-Stock

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SupplyDigital Components

Austria . 5,758 parts In-Stock

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TANS Electronics

Latvia . 5,722 parts In-Stock

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Kulean Microsystems

USA . 3,969 parts In-Stock

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Corphita

USA . 1,859 parts In-Stock

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Corohmni

South Africa . 382 parts In-Stock

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UHIMA Technologies

Türkiye . 227 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-11002-ABA-CP-AE by Onsemi, a cutting-edge image sensor that promises unparalleled quality and performance. With a wide range of applications in industries such as healthcare, automotive, and surveillance, this sensor offers crisp and clear images with a dynamic range of 66 dB. Onsemi's reputation for innovation and reliability ensures that you'll always receive a top-of-the-line product that delivers exceptional value and benefits to meet all your imaging needs. Choose the KAI-11002-ABA-CP-AE for superior results that will set you apart from the competition.

Feature Benefit Bullets

Pixel Size (um): 9X9

Smaller pixel size allows for higher resolution images and better image quality.

Maximum Supply Voltage: 15.5 V

Higher supply voltage ensures stable and consistent performance of the image sensor.

Body Width: 32.89 inch

Compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD image sensors are known for their high-quality image capture and low noise performance.

Body Height: 5.97 mm

Low body height allows for easy integration into a variety of systems or devices.

Package Shape or Style: RECTANGULAR

Rectangular shape provides versatility in mounting options and integration into different products.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures energy efficiency and extends the product's lifespan.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 4008

High horizontal pixel count results in detailed and sharp images.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Housing: CERAMIC

Ceramic housing provides durability and protection to the image sensor.

Dynamic Range: 66 dB

High dynamic range allows for capturing a wide range of light intensities, resulting in better image quality.

Vertical Pixel: 2672

High vertical pixel count contributes to better quality and resolution images.

Body Length/Diameter: 44.45 mm

Optimal body length/diameter ratio for easy installation and integration.

Data Rate: 28 Mbps

High data rate ensures fast and efficient image capture and transfer.

Termination Type: SOLDER

Solder termination provides a secure connection for reliable performance.

Array Type: INTERLINE

Interline array design allows for faster readout speed and reduced image distortion.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature provides easy and secure installation of the image sensor.

Technical Specifications

Image Sensors KAI-11002-ABA-CP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 13 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER, IT HAS 1.37 INCH OPTICAL FORMAT

Array Type:

INTERLINE

Body Width:

32.89 inch

Body Height:

5.97 mm

Body Length/Diameter:

44.45 mm

Data Rate:

28 Mbps

Dynamic Range:

66 dB

Horizontal Pixel:

4008

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

9X9

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2672

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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