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NOIV1SN025KA-GTI

Onsemi

NOIV1SN025KA-GTI by Onsemi

NOIV1SN025KA-GTI by Onsemi is an image sensor with 4.5x4.5 um pixel size, 310 MHz master clock, and 5120 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 59.6 dB. Ideal for applications requiring high-resolution imaging at a frame rate of 53 fps in a rectangular package shape with through-hole mounting feature.

Median Price

$2,413.380

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 5 parts In-Stock

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$2,413.380

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Digiode

USA . 2,039 parts In-Stock

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$2,263.232

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Vyrian

USA . 7,463 parts In-Stock

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Flip Electronics

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Corohmni

South Africa . 385 parts In-Stock

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$1,696.250

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385

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Corphita

USA . 1,176 parts In-Stock

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$2,144.115

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TANS Electronics

Latvia . 4,674 parts In-Stock

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SupplyDigital Components

Austria . 4,214 parts In-Stock

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Problanco Electronics

Mexico . 3,274 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Kulean Microsystems

USA . 319 parts In-Stock

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UHIMA Technologies

Türkiye . 99 parts In-Stock

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Overview

Enhance your imaging capabilities with the NOIV1SN025KA-GTI by Onsemi. As a leading manufacturer in image sensors, Onsemi ensures top-notch quality and reliability. This sensor is ideal for a wide range of applications, offering unparalleled clarity and precision. Whether you're capturing breathtaking landscapes or intricate details, this sensor delivers exceptional performance. Elevate your imaging experience with the NOIV1SN025KA-GTI and unlock a world of possibilities.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Provides high resolution and detailed images, ideal for professional photography and industrial applications.

Maximum Supply Voltage: 2 V

Offers flexibility in power supply options, ensuring compatibility with different systems.

Master Clock: 310 MHz

High clock frequency enables fast data processing and high-speed image capture.

Body Width: 36.1 inch

Compact size allows for easy integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, high sensitivity, and excellent image quality.

Package Shape or Style: RECTANGULAR

Rectangular design provides efficient use of space and easy mounting in a variety of configurations.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage helps to conserve power and extend battery life in portable devices.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Horizontal Pixel: 5120

High pixel count provides sharp and detailed images suitable for professional applications.

Minimum Operating Temperature: -40 °C

Operates at low temperatures, making it suitable for use in outdoor or industrial environments.

Maximum Operating Current: 775 mA

Handles high current requirements, ensuring stable operation under load.

Housing: CERAMIC

Ceramic housing offers excellent durability, thermal properties, and protection for the sensor.

Dynamic Range: 59.6 dB

Wide dynamic range captures details in both dark and bright areas of the image, ideal for various lighting conditions.

Vertical Pixel: 5120

High vertical pixel count ensures high-resolution images with exceptional clarity.

Body Length/Diameter: 43.1 mm

Compact body size allows for easy integration and installation in space-constrained applications.

Spectral Response (nm): 400-1000

Wide spectral response range enables capturing images across a broad range of wavelengths.

Optical Format (inch): 1.37

Standard optical format provides compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination offers secure and reliable electrical connections for seamless integration.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface enables fast data transfer for real-time image processing and analysis.

Frame Rate: 53 fps

High frame rate ensures smooth and fluid motion capture, suitable for video recording and live streaming.

Array Type: FRAME

Frame array design enhances image quality and simplifies data processing for better performance.

Mounting Feature: THROUGH HOLE MOUNT

Through-hole mounting allows for secure and stable installation in various applications.

Technical Specifications

Image Sensors NOIV1SN025KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

59.6 dB

Frame Rate:

53 fps

Horizontal Pixel:

5120

Housing:

CERAMIC

Master Clock:

310 MHz

Mounting Feature:

Maximum Operating Current:

775 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1.37

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

5120

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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