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NOIV1SE012KA-GTI

Onsemi

NOIV1SE012KA-GTI by Onsemi

NOIV1SE012KA-GTI by Onsemi is an image sensor with 4.5X4.5 um pixel size, 340 MHz master clock, and 4096 horizontal pixels. It operates b/w -40 to 85 °C and has a dynamic range of 56 dB. Ideal for applications requiring high-speed imaging with precise detail capture in various environments.

Median Price

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Lifecycle Status

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Digiode

USA . 2,077 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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Overview

Experience crystal-clear imaging like never before with the NOIV1SE012KA-GTI image sensor by Onsemi. Designed for optimum performance, this cutting-edge sensor delivers unparalleled accuracy and precision in capturing images. Perfect for a wide range of applications in industries such as medical, automotive, and surveillance, this sensor promises exceptional quality and reliability. Invest in the NOIV1SE012KA-GTI today and elevate your imaging capabilities to new heights. Unlock a world of possibilities with Onsemi's innovative technology.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size ensures high resolution and sharp image quality.

Maximum Supply Voltage: 2 V

Allows for flexibility in power supply options.

Master Clock: 340 MHz

Provides fast and efficient processing of image data.

Body Width: 36.1 inch

Compact size allows for easy integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS technology ensures low power consumption and high sensitivity.

Package Shape or Style: RECTANGULAR

Standard shape for easy mounting and installation.

Minimum Supply Voltage: 1.6 V

Low minimum supply voltage for energy efficiency.

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatility in different environments.

Horizontal Pixel: 4096

High number of horizontal pixels for detailed image capture.

Output Type: CURRENT OUTPUT

Current output for accurate and reliable signal transmission.

Minimum Operating Temperature: -40 °C

Operates in low temperature conditions for diverse applications.

Maximum Operating Current: 915 mA

Supports high current output for demanding imaging tasks.

Housing: CERAMIC

Durable ceramic housing for protection and long-term reliability.

Dynamic Range: 56 dB

Wide dynamic range for capturing both bright and dark scenes accurately.

Vertical Pixel: 3072

High number of vertical pixels for comprehensive image capture.

Body Length/Diameter: 43.1 mm

Compact size for space-efficient design.

Spectral Response (nm): 400-1000

Broad spectral response for versatile imaging capabilities.

Optical Format (inch): 4/3

Standard optical format for compatibility with various lenses.

Termination Type: SOLDER

Secure solder termination for reliable connections.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for efficient data transmission.

Frame Rate: 110 fps

High frame rate for smooth and real-time imaging.

Array Type: FRAME

Frame array design for capturing complete images in one frame.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount for secure and stable installation.

Technical Specifications

Image Sensors NOIV1SE012KA-GTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT 3 TO 3.6 V SUPPLY VOLTAGE, GLOBAL SHUTTER, ROLLING SHUTTER

Array Type:

FRAME

Body Width:

36.1 inch

Body Length/Diameter:

43.1 mm

Dynamic Range:

56 dB

Frame Rate:

110 fps

Horizontal Pixel:

4096

Housing:

CERAMIC

Master Clock:

340 MHz

Mounting Feature:

Maximum Operating Current:

915 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

4/3

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

2 V

Minimum Supply Voltage:

1.6 V

Termination Type:

SOLDER

Vertical Pixel:

3072

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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