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KAI-47051-FXA-JD-B1

Onsemi

KAI-47051-FXA-JD-B1 by Onsemi

KAI-47051-FXA-JD-B1 by Onsemi is an image sensor with 5.5x5.5 um pixel size, 40 MHz master clock, and 66 dB dynamic range. Ideal for applications requiring high-resolution imaging in a compact form factor, such as industrial machine vision systems or medical imaging devices.

Median Price

$34,228.960

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2 parts In-Stock

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Verical

USA . 2 parts In-Stock

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Digiode

USA . 1,633 parts In-Stock

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$32,517.512

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Vyrian

USA . 6,482 parts In-Stock

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AZTECH Wire

Italy . 787 parts In-Stock

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$12.660

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Corphita

USA . 886 parts In-Stock

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$30,806.064

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Corohmni

South Africa . 123 parts In-Stock

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SupplyDigital Components

Austria . 7,758 parts In-Stock

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Kulean Microsystems

USA . 7,151 parts In-Stock

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Problanco Electronics

Mexico . 3,892 parts In-Stock

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TANS Electronics

Latvia . 3,446 parts In-Stock

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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Overview

Experience the exceptional quality and precision of the KAI-47051-FXA-JD-B1 image sensor by Onsemi. With cutting-edge technology and innovative design, this sensor offers unmatched performance in a variety of applications. From high-resolution imaging to industrial automation, this sensor provides superior image quality and accurate results. Trust Onsemi's reputation for reliability and excellence, and unlock the endless possibilities with the KAI-47051-FXA-JD-B1 image sensor.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size ensures high resolution and sharp image quality.

Maximum Supply Voltage: 15.5 V

Allows for a wider voltage range for operation, offering flexibility in power supply options.

Master Clock: 40 MHz

High master clock frequency enables fast data readout and processing.

Body Width: 44.55 inch

Compact body design for easy integration in various devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high image quality, making this product suitable for demanding imaging applications.

Body Height: 3.25 mm

Low profile design for slim device form factors.

Package Shape or Style: RECTANGULAR

Standard rectangular package for easy handling and mounting.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for use in diverse environmental conditions.

Horizontal Pixel: 8856

High horizontal pixel count for detailed and wide-angle image capture.

Minimum Operating Temperature: -50 °C

Able to withstand low temperatures, making it suitable for outdoor or extreme conditions.

Dynamic Range: 66 dB

Wide dynamic range for capturing both bright and dark areas in a scene with detail.

Vertical Pixel: 5280

High vertical pixel count for capturing detailed images with depth.

Body Length/Diameter: 69.96 mm

Optimal body dimensions for fitting into various device designs.

Termination Type: SOLDER

Solder termination for secure and reliable connection in manufacturing.

Frame Rate: 7 fps

Decent frame rate for capturing motion in real-time with smooth playback.

Array Type: INTERLINE

Interline array for efficient and fast readout of pixel data.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting for easy and secure installation in circuit boards.

Technical Specifications

Image Sensors KAI-47051-FXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 38 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.55 inch

Body Height:

3.25 mm

Body Length/Diameter:

69.96 mm

Dynamic Range:

66 dB

Frame Rate:

7 fps

Horizontal Pixel:

8856

Master Clock:

40 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5280

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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