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KAI-02170-PBA-JD-BA

Onsemi

KAI-02170-PBA-JD-BA by Onsemi

KAI-02170-PBA-JD-BA by Onsemi is an image sensor with 1920x1080 pixels, 7.4um pixel size, and 70.2dB dynamic range. It operates b/w -50 to 70 °C and has a supply voltage range of 14.5V to 15.5V. Ideal for applications requiring high-quality imaging in various environmental conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,474 parts In-Stock

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2,474

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Digiode

USA . 1,493 parts In-Stock

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1,493

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 6,030 parts In-Stock

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6,030

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Kulean Microsystems

USA . 5,879 parts In-Stock

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5,879

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Problanco Electronics

Mexico . 3,965 parts In-Stock

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3,965

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SupplyDigital Components

Austria . 608 parts In-Stock

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608

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Corphita

USA . 341 parts In-Stock

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341

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Corohmni

South Africa . 72 parts In-Stock

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72

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UHIMA Technologies

Türkiye . 10 parts In-Stock

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Overview

Capture the essence of every moment with the KAI-02170-PBA-JD-BA Image Sensor by Onsemi. Known for its superior quality and precision engineering, Onsemi delivers cutting-edge technology that exceeds industry standards. This image sensor is ideal for a wide range of applications, offering crystal-clear images with unmatched clarity and detail. Experience the value and benefits of this innovative product, designed to elevate your imaging experience to new heights.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Allows for detailed and high resolution images to be captured.

Maximum Supply Voltage: 15.5 V

Provides ample power for efficient performance of the image sensor.

Body Width: 20.07 inch

Wide body design allows for easy integration and mounting in various devices.

Power Supplies (V): 15

Optimal power supply to ensure stable and reliable operation of the image sensor.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors offer high-quality image capture and are ideal for imaging applications.

Package Shape or Style: RECTANGULAR

Rectangular shape enables easy fitting and compatibility with different equipment designs.

Minimum Supply Voltage: 14.5 V

Ensures that the image sensor can operate at lower power levels without compromising performance.

Maximum Operating Temperature: 70 °C

Can withstand high temperatures, making it suitable for a range of environments and applications.

Horizontal Pixel: 1920

High pixel count allows for detailed image processing and clarity in captured images.

Minimum Operating Temperature: -50 °C

Capable of functioning in extremely cold conditions, expanding its usability across different climates.

Dynamic Range: 70.2 dB

Wide dynamic range ensures accurate and vibrant image reproduction with minimal noise.

Vertical Pixel: 1080

Vertical pixel count contributes to the overall resolution and quality of images captured by the sensor.

Body Length/Diameter: 33.02 mm

Compact body size allows for easy integration and space-saving installation in devices.

Termination Type: SOLDER

Solder termination provides secure connections for reliable electrical performance and durability.

Array Type: INTERLINE

Interline array type offers efficient light capture and high-speed image processing capabilities.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting ensures strong mechanical support and stability for the image sensor.

Technical Specifications

Image Sensors KAI-02170-PBA-JD-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS SENSITIVITY OF 8.7 MICRO VOLT PER ELECTRON LOW AND 33 MICRO VOLT PER ELECTRON HIGH; ELECTRONIC SHUTTER; DYNAMIC RANGE, EXTENDED LINEAR OF 82.5

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

70.2 dB

Horizontal Pixel:

1920

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Power Supplies (V):

15

Sensors or Transducers Type:

Sub-Category:

CCD Image Sensors

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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