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AR0239ATSH00XUEA0-DRBR-E

Onsemi

AR0239ATSH00XUEA0-DRBR-E by Onsemi

Onsemi's AR0239ATSH00XUEA0-DRBR-E is a 3x3 um CMOS image sensor with 1936H x 1188V pixels, offering a dynamic range of 128 dB. Operating at -40 to 105 °C, it has a digital voltage output interface and supports frame rates up to 90 fps. Ideal for applications requiring high-resolution imaging in automotive and surveillance systems.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Kulean Microsystems

USA . 4,135 parts In-Stock

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Problanco Electronics

Mexico . 2,323 parts In-Stock

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SupplyDigital Components

Austria . 1,830 parts In-Stock

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Corphita

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Northwest PG Solutions

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TANS Electronics

Latvia . 546 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 209 parts In-Stock

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Corohmni

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Overview

Capture stunning images with the Onsemi AR0239ATSH00XUEA0-DRBR-E image sensor. Manufactured by Onsemi, a leader in imaging technology, this sensor offers unrivaled quality and performance. Ideal for a wide range of applications, this sensor provides superior image resolution and clarity. Elevate your products with the value and benefits that this top-of-the-line sensor brings, delivering exceptional results that will impress even the most discerning customers.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for higher resolution images and better overall image quality.

Maximum Supply Voltage: 1.26 V

Allows for efficient power consumption and longer battery life.

Master Clock: 27 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 9 inch

Compact size makes it suitable for various applications and easy integration into different devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption, fast operation, and high-quality image capture.

Body Height: 1.55 mm

Low profile design allows for slim device profiles and integration into small form factor products.

Package Shape or Style: SQUARE

Square shape provides efficient use of space and easy mounting capabilities.

Minimum Supply Voltage: 1.14 V

Low minimum supply voltage for improved power efficiency and lower heat generation.

Maximum Operating Temperature: 105 °C

Wide operating temperature range allows for use in various environmental conditions.

Horizontal Pixel: 1936

High horizontal pixel count results in detailed and sharp images with high resolution.

Output Range: 0.40-2.50V

Wide output range provides flexibility in signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and reduces interference and noise.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures reliable operation even in extreme cold conditions.

Maximum Operating Current: 75 mA

Low operating current for energy efficiency and reduced power consumption.

Housing: PLASTIC

Plastic housing is lightweight, durable, and cost-effective for mass production.

Dynamic Range: 128 dB

High dynamic range allows for capturing both bright and dark areas in high contrast scenes.

Vertical Pixel: 1188

High vertical pixel count ensures detailed images with a good depth of field.

Body Length/Diameter: 9 mm

Compact body size for easy integration and versatile placement in different devices.

Optical Format (inch): 1/2.7

Standard optical format for compatibility with various lenses and optical systems.

Termination Type: SOLDER

Solder termination provides secure and reliable electrical connection for long-term use.

Output Interface Type: 2-WIRE INTERFACE

Simple and common interface type for easy integration and communication with other systems.

Frame Rate: 90 fps

High frame rate capability allows for capturing fast-moving objects and smooth video recording.

Array Type: FRAME

Frame array structure enables simultaneous capture of multiple image frames for improved image quality.

Mounting Feature: SURFACE MOUNT

Surface mount option simplifies the installation process and saves space on PCBs.

Technical Specifications

Image Sensors AR0239ATSH00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V ANALOG NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.55 mm

Body Length/Diameter:

9 mm

Dynamic Range:

128 dB

Frame Rate:

90 fps

Horizontal Pixel:

1936

Housing:

PLASTIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

75 mA

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Termination Type:

SOLDER

Vertical Pixel:

1188

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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