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MT9V138C12STC-DP

Onsemi

MT9V138C12STC-DP by Onsemi

MT9V138C12STC-DP by Onsemi is a 5.60x5.60 um CMOS image sensor with 680H x 512V pixels, operating at 30 fps. It has a max supply voltage of 1.9V and a dynamic range of 74.8 dB, suitable for digital imaging applications in various industries.

Median Price

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Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,375 parts In-Stock

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Digiode

USA . 1,796 parts In-Stock

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Goldney Electronics S.L.

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AZTECH Wire

Italy . 197 parts In-Stock

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$18.700

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TANS Electronics

Latvia . 5,443 parts In-Stock

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Kulean Microsystems

USA . 1,752 parts In-Stock

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SupplyDigital Components

Austria . 1,433 parts In-Stock

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Problanco Electronics

Mexico . 798 parts In-Stock

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Corohmni

South Africa . 336 parts In-Stock

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Corphita

USA . 156 parts In-Stock

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UHIMA Technologies

Türkiye . 67 parts In-Stock

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Overview

Capture stunning images with the MT9V138C12STC-DP image sensor by Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge technology that exceeds expectations. Ideal for a wide range of applications, this image sensor offers unmatched value and performance. Elevate your projects with the superior image quality and advanced features of the MT9V138C12STC-DP, setting new standards in the industry. Experience the difference with Onsemi.

Feature Benefit Bullets

Pixel Size (um): 5.60X5.60

This product has a relatively small pixel size which allows for high resolution images to be captured.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage indicates that this image sensor is energy efficient.

Master Clock: 27 MHz

The high master clock frequency enables fast image processing and data transfer.

Body Width: 11.43 inch

The compact body width makes this image sensor suitable for integration into smaller devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption and high image quality.

Body Height: 2.25 mm

The low body height allows for slim designs and easy integration into devices.

Package Shape or Style: SQUARE

The square package shape provides stability and ease of mounting for the image sensor.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage further emphasizes the energy efficiency of this image sensor.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature ensures reliability in various environmental conditions.

Horizontal Pixel: 680

With a high horizontal pixel count, this image sensor can capture detailed images with precision.

Output Range: -0.30-2.80V

The wide output range allows for flexible signal processing and compatibility with different systems.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies data processing and integration with digital systems.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature ensures functionality even in extreme cold conditions.

Maximum Operating Current: 50 mA

The low maximum operating current contributes to the energy efficiency of this image sensor.

Housing: CERAMIC

The ceramic housing provides durability and protection for the sensitive components of the image sensor.

Dynamic Range: 74.8 dB

The high dynamic range allows for capturing images with a wide range of brightness levels.

Vertical Pixel: 512

The vertical pixel count complements the horizontal pixel count for capturing high-quality images.

Body Length/Diameter: 11.43 mm

The compact body length/diameter makes this image sensor suitable for various applications and designs.

Optical Format (inch): 1/4

The optical format of 1/4 inch provides compatibility with a wide range of lenses and optical systems.

Termination Type: SOLDER

The solder termination type ensures secure connections and reliable performance in various operating conditions.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices and systems.

Frame Rate: 30 fps

With a high frame rate of 30 fps, this image sensor can capture smooth and clear video footage.

Array Type: FRAME

The frame array type enables the simultaneous capture of multiple image frames for enhanced performance.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the image sensor on PCBs and other surfaces.

Technical Specifications

Image Sensors MT9V138C12STC-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.66-2.94 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.25 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

74.8 dB

Frame Rate:

30 fps

Horizontal Pixel:

680

Housing:

CERAMIC

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

5.60X5.60

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

512

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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