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AS0260CSSC28SUD20

Onsemi

AS0260CSSC28SUD20 by Onsemi

AS0260CSSC28SUD20 by Onsemi is a CMOS image sensor with 1920x1080 pixels, 1.4um pixel size, and 54MHz master clock. It operates b/w -30 to 70 °C and has a dynamic range of 65dB. Ideal for applications requiring high-resolution imaging at fast frame rates.

Median Price

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Lifecycle Status

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Vyrian

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AZTECH Wire

Italy . 1,053 parts In-Stock

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SupplyDigital Components

Austria . 6,839 parts In-Stock

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Problanco Electronics

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Authorized Procurement Solutions

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Kulean Microsystems

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TANS Electronics

Latvia . 3,188 parts In-Stock

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Northwest PG Solutions

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Corphita

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Native Components

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UHIMA Technologies

Türkiye . 251 parts In-Stock

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Corohmni

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Overview

Discover the unparalleled quality and innovation of the AS0260CSSC28SUD20 image sensor by Onsemi. Designed for a wide range of applications, this cutting-edge CMOS sensor offers unmatched performance and reliability. With a high-resolution pixel array and advanced output interface, this sensor delivers crisp and clear images at an impressive frame rate. Whether you're capturing stunning visuals for security systems, medical devices, or consumer electronics, the AS0260CSSC28SUD20 provides exceptional value and functionality to meet your needs. Upgrade your imaging capabilities with this state-of-the-art sensor today.

Feature Benefit Bullets

Pixel Size (um): 1.4X1.4

The small pixel size allows for high resolution images to be captured, making this image sensor suitable for applications where detailed images are required.

Maximum Supply Voltage: 1.95 V

The high maximum supply voltage ensures stable operation and reliable performance of the image sensor.

Master Clock: 54 MHz

The high master clock frequency of 54 MHz enables fast data processing and high-speed image capturing.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, it offers low power consumption, high sensitivity, and excellent noise performance, making it a reliable choice for various imaging applications.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage allows for efficient power usage and extends the battery life of devices using this image sensor.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C ensures the image sensor can be used in a wide range of environments without performance degradation.

Horizontal Pixel: 1920

With a large number of horizontal pixels, this image sensor is capable of capturing high-resolution, detailed images.

Output Range: 0.40-1.50V

The wide output range allows for versatility in adjusting the output signal according to different lighting conditions, making it suitable for various imaging scenarios.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies the interface with other electronics, making integration into systems easier and more efficient.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature of -30 °C ensures the image sensor can function reliably even in cold environments.

Dynamic Range: 65 dB

The high dynamic range allows the image sensor to capture both bright and dark areas in a scene accurately, resulting in high-quality images with good contrast.

Vertical Pixel: 1080

The large number of vertical pixels ensures that the image sensor can capture detailed images with superior resolution and clarity.

Optical Format (inch): 1/6

The optical format of 1/6 inch makes this image sensor compact and suitable for use in small portable devices or embedded systems.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity and communication with other devices, enabling seamless integration into various systems.

Frame Rate: 120 fps

The high frame rate of 120 frames per second allows for smooth and high-speed image capture, making it ideal for applications requiring fast-moving object tracking or high-speed imaging.

Array Type: FRAME

The frame array type of the image sensor allows for efficient image capture and processing, enabling rapid and accurate image acquisition.

Sensitivity (V/lx.s): 0.64 V/lx.s

The high sensitivity of 0.64 V/lx.s ensures that the image sensor can capture clear images even in low-light conditions, making it suitable for imaging in various lighting environments.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure mounting of the image sensor onto circuit boards, making it suitable for mass production and integration into electronic devices.

Technical Specifications

Image Sensors AS0260CSSC28SUD20 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO OPERATES AT 2.8 V NOMINAL ANALOG SUPPLY VOLTAGE

Array Type:

FRAME

Dynamic Range:

65 dB

Frame Rate:

120 fps

Horizontal Pixel:

1920

Master Clock:

54 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/6

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Pixel Size (um):

1.4X1.4

Sensitivity (V/lx.s):

.64 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Vertical Pixel:

1080

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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