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AR0135CS2M00SUEA0-DPBR

Onsemi

AR0135CS2M00SUEA0-DPBR by Onsemi

Onsemi AR0135CS2M00SUEA0-DPBR is a 1/3" CMOS image sensor with 1280x960 resolution, 3.75um pixel size, and 71.1dB dynamic range. Ideal for applications requiring high-quality digital imaging at up to 54fps frame rate in a compact surface-mount package.

Median Price

$25.918

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

AR0135CS2M00SUEA0-DPBR by Onsemi
Compare Share

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,886 parts In-Stock

1+ parts

$27.610

100+ parts

$22.035

1k+ parts

-

10k+ parts

-

1,886

$27.610

$22.035

-

-

Chip1Stop

Japan . 2,600 parts In-Stock

1+ parts

$88.200

100+ parts

$41.300

1k+ parts

$27.500

10k+ parts

-

2,600

$88.200

$41.300

$27.500

-

Rochester

USA . 4,670 parts In-Stock

1+ parts

-

100+ parts

$19.380

1k+ parts

$17.340

10k+ parts

$16.320

4,670

-

$19.380

$17.340

$16.320

Verical

USA . 2,070 parts In-Stock

1+ parts

-

100+ parts

$24.225

1k+ parts

$21.675

10k+ parts

$20.400

2,070

-

$24.225

$21.675

$20.400

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,260 parts In-Stock

1+ parts

$19.710

100+ parts

-

1k+ parts

-

10k+ parts

-

1,260

$19.710

-

-

-

Digiode

USA . 1,885 parts In-Stock

1+ parts

$20.454

100+ parts

-

1k+ parts

-

10k+ parts

-

1,885

$20.454

-

-

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Flip Electronics

USA . 9,249 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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9,249

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-

-

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Chip Stock

USA . 5,800 parts In-Stock

1+ parts

-

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5,800

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-

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NAC Semi

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$36.620

2,600

-

-

-

$36.620

VNN

France . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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90

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Nova Conductors

Japan . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 254 parts In-Stock

1+ parts

$19.370

100+ parts

-

1k+ parts

-

10k+ parts

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254

$19.370

-

-

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Corphita

USA . 1,787 parts In-Stock

1+ parts

$19.377

100+ parts

-

1k+ parts

-

10k+ parts

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1,787

$19.377

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-

-

Perfect Parts

USA . 145,609 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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145,609

-

-

-

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GreenTree Electronics

Israel . 26,000 parts In-Stock

1+ parts

-

100+ parts

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26,000

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-

-

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SupplyDigital Components

Austria . 8,027 parts In-Stock

1+ parts

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8,027

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Problanco Electronics

Mexico . 7,262 parts In-Stock

1+ parts

-

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7,262

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-

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TANS Electronics

Latvia . 3,301 parts In-Stock

1+ parts

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3,301

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Kepictronics

USA . 3,100 parts In-Stock

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3,100

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-

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Authorized Procurement Solutions

USA . 2,600 parts In-Stock

1+ parts

-

100+ parts

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2,600

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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1,000

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-

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Kulean Microsystems

USA . 285 parts In-Stock

1+ parts

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285

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Futuretech Components

Singapore . 260 parts In-Stock

1+ parts

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260

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UHIMA Technologies

Türkiye . 128 parts In-Stock

1+ parts

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128

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-

Overview

Capture every moment in stunning detail with the AR0135CS2M00SUEA0-DPBR Image Sensor by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. This sensor is perfect for a wide range of applications, from security cameras to automotive imaging systems. Experience the superior performance and exceptional value that this sensor brings to your projects, with its high resolution, wide dynamic range, and easy integration. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Pixel Size (um): 3.75

Small pixel size allows for high resolution images with fine details.

Maximum Supply Voltage: 1.95 V

Allows for efficient power consumption while providing enough voltage for the sensor to function effectively.

Master Clock: 50 MHz

High master clock frequency enables fast data processing and high frame rates.

Body Width: 9 inch

Compact size makes it suitable for integration into various devices or systems.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS technology offers low power consumption and high sensitivity, resulting in quality image capture.

Package Shape or Style: SQUARE

Square package shape allows for efficient mounting and space utilization in electronic devices.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures the sensor can be used in various environments without overheating.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed and sharp images.

Output Range: 0.40-1.50V

Wide output range allows for capturing images in various lighting conditions with good dynamic range.

Output Type: DIGITAL VOLTAGE

Digital output simplifies signal processing and integration with other digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures the sensor can function in cold environments without issues.

Maximum Operating Current: 90 mA

Low operating current helps in efficient power management and extended battery life in portable devices.

Dynamic Range: 71.1 dB

High dynamic range allows for capturing details in both bright and dark areas of the image.

Vertical Pixel: 960

High vertical pixel count enhances the resolution and clarity of images.

Body Length/Diameter: 9 mm

Compact body size makes it easy to integrate the sensor into various devices or applications.

Optical Format (inch): 1/3

Common optical format ensures compatibility with a wide range of lenses and accessories.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and data transfer between the sensor and other devices.

Frame Rate: 54 fps

High frame rate enables smooth and real-time image capture for fast-moving subjects or events.

Array Type: FRAME

Array type design allows for capturing multiple frames quickly, ideal for continuous shooting and video recording.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation and integration of the sensor onto circuit boards or PCBs.

Technical Specifications

Image Sensors AR0135CS2M00SUEA0-DPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.39 mm

Body Length/Diameter:

9 mm

Dynamic Range:

71.1 dB

Frame Rate:

54 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

90 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

960

Trade Compliance

AR0135CS2M00SUEA0-DPBR Sensors & Transducers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.40.60.50

SB

8541.40.60.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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