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MT9P014D00STC

Onsemi

MT9P014D00STC by Onsemi

The Onsemi MT9P014D00STC image sensor features 2.2x2.2 um pixel size, 27 MHz master clock, and 2592 horizontal pixels. Ideal for digital cameras, surveillance systems, and industrial imaging applications due to its high sensitivity (0.8 V/lx.s) and wide dynamic range of 69 dB.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,727 parts In-Stock

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Vyrian

USA . 618 parts In-Stock

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Kulean Microsystems

USA . 4,551 parts In-Stock

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SupplyDigital Components

Austria . 4,079 parts In-Stock

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Problanco Electronics

Mexico . 3,888 parts In-Stock

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TANS Electronics

Latvia . 2,804 parts In-Stock

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Corphita

USA . 1,052 parts In-Stock

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Corohmni

South Africa . 226 parts In-Stock

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UHIMA Technologies

Türkiye . 3 parts In-Stock

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Overview

Capture every moment with the high-quality MT9P014D00STC image sensor by Onsemi. Known for their superior manufacturing standards, Onsemi delivers cutting-edge technology in the field of image sensors. Ideal for a wide range of applications, this sensor offers unparalleled performance and reliability. Whether you're capturing images for security systems, medical devices, or automotive cameras, this sensor provides exceptional value, benefits, and advantages to meet your needs. Trust Onsemi to deliver the quality and innovation you deserve.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

Small pixel size allows for high resolution images with sharp details.

Maximum Supply Voltage: 1.9 V

Efficient power consumption with a low maximum supply voltage.

Master Clock: 27 MHz

High master clock frequency enables fast image processing capabilities.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors provide high image quality and low power consumption.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for energy-efficient operation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range for versatile use in varying environments.

Horizontal Pixel: 2592

High horizontal pixel count for detailed and high-resolution images.

Output Type: DIGITAL OUTPUT

Digital output provides easy integration with digital systems and devices.

Minimum Operating Temperature: -30 °C

Operates reliably in low temperature conditions for extended use cases.

Dynamic Range: 69 dB

Wide dynamic range ensures accurate representation of both bright and dark areas in the image.

Vertical Pixel: 1944

High vertical pixel count for detailed and high-resolution images.

Optical Format (inch): 1/2.5

Common optical format for easy compatibility with various lenses and imaging systems.

Termination Type: SOLDER

Solder termination ensures secure and reliable electrical connections.

Output Interface Type: 2-WIRE INTERFACE

2-Wire interface for simple and efficient communication with external devices.

Frame Rate: 15 fps

Decent frame rate for smooth and fluid video recording and image capture.

Array Type: FRAME

Frame array design for organized and systematic image capture.

Sensitivity (V/lx.s): 0.8 V/lx.s

High sensitivity for capturing clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy and secure installation in various devices and equipment.

Technical Specifications

Image Sensors MT9P014D00STC attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

DATA RATE OF 768MB/S, FRAME RATE of 30FPS @1080P AND 60FPS @720P, IT ALSO OPERATES AT ANALOG VOLTAGE 2.4-3.1 V

Array Type:

FRAME

Dynamic Range:

69 dB

Frame Rate:

15 fps

Horizontal Pixel:

2592

Master Clock:

27 MHz

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensitivity (V/lx.s):

.8 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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