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KAI-16000-AXA-JR-B1

Onsemi

KAI-16000-AXA-JR-B1 by Onsemi

KAI-16000-AXA-JR-B1 by Onsemi is an image sensor with 7.4x7.4 um pixel size, 4872 horizontal pixels, and 3248 vertical pixels. It operates b/w -50 to 70 °C and has a dynamic range of 65 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,067 parts In-Stock

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Digiode

USA . 1,526 parts In-Stock

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Kulean Microsystems

USA . 8,065 parts In-Stock

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TANS Electronics

Latvia . 7,175 parts In-Stock

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Corphita

USA . 1,368 parts In-Stock

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SupplyDigital Components

Austria . 997 parts In-Stock

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997

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Problanco Electronics

Mexico . 503 parts In-Stock

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Corohmni

South Africa . 321 parts In-Stock

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UHIMA Technologies

Türkiye . 17 parts In-Stock

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Overview

Capture the world in stunning detail with the KAI-16000-AXA-JR-B1 by Onsemi. As a leading manufacturer of image sensors, Onsemi delivers unparalleled quality and performance in every product. The KAI-16000-AXA-JR-B1 is perfect for a wide range of applications, from industrial machine vision to scientific imaging. Experience the value of exceptional image quality, reliability, and versatility that this sensor offers. Upgrade your imaging system today with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

Small pixel size allows for high resolution images with great detail.

Maximum Supply Voltage: 15.5 V

Allows for flexibility in power supply options, ensuring compatibility in various systems.

Body Width: 44.45 inch

Compact size makes it easy to integrate into different devices or applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image output and low noise performance.

Body Height: 4.88 mm

Low profile design enables installation in space-constrained environments.

Package Shape or Style: RECTANGULAR

Standard rectangular shape for easy mounting and compatibility with existing fixtures.

Minimum Supply Voltage: 14.5 V

Low minimum supply voltage helps in power conservation.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures performance in various environmental conditions.

Horizontal Pixel: 4872

High pixel count translates to detailed and sharp images.

Minimum Operating Temperature: -50 °C

Wide temperature range allows for use in extreme cold conditions.

Dynamic Range: 65 dB

Good dynamic range provides rich detail in both bright and dark areas of an image.

Vertical Pixel: 3248

High vertical pixel count contributes to the overall image quality.

Body Length/Diameter: 45.34 mm

Compact body size for easy integration into different setups.

Optical Format (inch): 4/2.9

Optical format determines the compatibility with lenses and overall image quality.

Data Rate: 30 Mbps

High data rate allows for fast transfer of image data, crucial for real-time applications.

Termination Type: SOLDER

Solder termination ensures secure connection in the device.

Array Type: INTERLINE

Interline array offers fast readout speeds and reduced image lag.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount provides secure and stable installation in a variety of setups.

Technical Specifications

Image Sensors KAI-16000-AXA-JR-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 30 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

44.45 inch

Body Height:

4.88 mm

Body Length/Diameter:

45.34 mm

Data Rate:

30 Mbps

Dynamic Range:

65 dB

Horizontal Pixel:

4872

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/2.9

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

3248

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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