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MT9P031I12STC-TP

Onsemi

MT9P031I12STC-TP by Onsemi

Onsemi's MT9P031I12STC-TP is a 2.2x2.2 um CMOS image sensor with 2592 (H) x 1944 (V) pixels, offering a dynamic range of 70.1 dB and operating at temperatures from -30 to 70°C. It features a digital voltage output interface, operates on supply voltages b/w 1.7-1.9V, and has a max frame rate of 14 fps, making it ideal for applications requiring high-quality imaging in various environmental conditions.

Median Price

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Vyrian

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Flip Electronics

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Digiode

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Nova Conductors

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Aztec Data Supply Inc.

USA . 130 parts In-Stock

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$2.910

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AZTECH Wire

Italy . 352 parts In-Stock

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Semicontronic

India . 775 parts In-Stock

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Ampacity Inc.

Singapore . 459 parts In-Stock

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Kulean Microsystems

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Continental Prestige Electronics

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SupplyDigital Components

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Problanco Electronics

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Argo Parts USA

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TANS Electronics

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Corphita

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UHIMA Technologies

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Corohmni

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Bastille Electronics

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Overview

Capture every moment in stunning clarity with the MT9P031I12STC-TP Image Sensor by Onsemi. This cutting-edge CMOS sensor offers unparalleled image quality and precision, making it ideal for a wide range of applications. From high-resolution surveillance cameras to advanced medical imaging systems, this sensor delivers exceptional performance and reliability. Trust Onsemi's legacy of innovation and expertise in image sensor technology to bring your vision to life. Upgrade your products with the MT9P031I12STC-TP and experience the difference in quality and value that only Onsemi can provide.

Feature Benefit Bullets

Pixel Size (um): 2.2X2.2

The small pixel size allows for high resolution images to be captured with fine details.

Maximum Supply Voltage: 1.9 V

Low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 96 MHz

High master clock speed enables fast processing of image data.

Body Width: 10 inch

Compact body width makes it suitable for integration into various devices.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensor technology offers low power consumption and high image quality.

Body Height: 1.25 mm

Slim body height allows for easy integration into slim devices or systems.

Package Shape or Style: SQUARE

Square package shape provides ease of mounting and alignment during installation.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage ensures compatibility with a wide range of power sources.

Maximum Operating Temperature: 70 °C

High maximum operating temperature allows for reliable performance in various environments.

Horizontal Pixel: 2592

High horizontal pixel resolution results in detailed and sharp images.

Output Range: 0.60-2.30V

Wide output range provides flexibility in signal processing and compatibility with different circuits.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and enhances compatibility with digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature ensures performance in extreme cold conditions.

Maximum Operating Current: 35 mA

Low operating current helps in reducing power consumption and prolonging battery life.

Dynamic Range: 70.1 dB

High dynamic range allows for capturing a wide range of light intensities in a scene.

Vertical Pixel: 1944

High vertical pixel resolution contributes to detailed and high-quality images.

Body Length/Diameter: 10 mm

Compact body length/diameter facilitates space-saving installation in devices.

Optical Format (inch): 1/2.5

Standard optical format ensures compatibility with a wide range of lenses and accessories.

Termination Type: SOLDER

Solder termination offers secure and reliable connections for long-term performance.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and communication with external systems or controllers.

Frame Rate: 14 fps

Decent frame rate enables smooth video recording and fast image capture.

Array Type: FRAME

Frame array type allows for capturing multiple frames for better image quality and processing.

Mounting Feature: SURFACE MOUNT

Surface mount capability eases installation and integration into electronic boards or systems.

Technical Specifications

Image Sensors MT9P031I12STC-TP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, GLOBAL RESET RELEASE, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.6-3.1V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.25 mm

Body Length/Diameter:

10 mm

Dynamic Range:

70.1 dB

Frame Rate:

14 fps

Horizontal Pixel:

2592

Master Clock:

96 MHz

Mounting Feature:

Maximum Operating Current:

35 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.2X2.2

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1944

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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