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KAI-02050-AAA-JP-AE

Onsemi

KAI-02050-AAA-JP-AE by Onsemi

Onsemi's KAI-02050-AAA-JP-AE is a 5.5x5.5 um CCD image sensor with 1684H x 1264V pixels, offering a dynamic range of 64 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and is ideal for industrial imaging applications due to its high resolution and wide temperature tolerance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,532 parts In-Stock

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Digiode

USA . 1,469 parts In-Stock

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SupplyDigital Components

Austria . 8,036 parts In-Stock

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Kulean Microsystems

USA . 7,603 parts In-Stock

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TANS Electronics

Latvia . 6,900 parts In-Stock

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Problanco Electronics

Mexico . 5,561 parts In-Stock

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Corphita

USA . 1,079 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Corohmni

South Africa . 470 parts In-Stock

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UHIMA Technologies

Türkiye . 225 parts In-Stock

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Overview

Discover the world in stunning clarity with the KAI-02050-AAA-JP-AE image sensor by Onsemi. Known for their superior quality and reliability, Onsemi's sensors are trusted by professionals in various industries. This innovative product offers unmatched performance and versatility, making it ideal for applications such as machine vision, surveillance, and medical imaging. With a wide range of benefits and advantages, including high resolution and a wide dynamic range, the KAI-02050-AAA-JP-AE is sure to exceed your expectations and take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um) 5.5X5.5

Small pixel size allows for high-resolution images with fine details.

Maximum Supply Voltage 15.5 V

Higher supply voltage provides more power for the sensor to operate efficiently.

Body Width 20.07 inch

Wide body allows for larger sensor area, capturing more information.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD sensors are known for their high image quality and low noise levels.

Package Shape or Style RECTANGULAR

Rectangular shape facilitates easy integration into different devices and systems.

Minimum Supply Voltage 14.5 V

Even at lower supply voltage, the sensor can still function effectively.

Maximum Operating Temperature 70 °C

High maximum temperature range allows for operation in various environments.

Horizontal Pixel 1684

High horizontal pixel count enables detailed and sharp image capture.

Minimum Operating Temperature -50 °C

Wide operational temperature range ensures reliable performance in extreme conditions.

Dynamic Range 64 dB

Good dynamic range allows for capturing of both bright and dark areas in the same scene.

Vertical Pixel 1264

Vertical pixel count contributes to the overall resolution and quality of the image.

Body Length/Diameter 33.02 mm

Compact body size makes it suitable for integration into various devices and applications.

Optical Format (inch) 2/3

Standard optical format provides compatibility with a wide range of lenses and accessories.

Termination Type SOLDER

Solder termination ensures secure and reliable electrical connections.

Array Type INTERLINE

Interline array type offers fast readout speeds and efficient image processing.

Mounting Feature THROUGH HOLE MOUNT

Through hole mounting allows for easy and secure installation in various products.

Technical Specifications

Image Sensors KAI-02050-AAA-JP-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

20.07 inch

Body Length/Diameter:

33.02 mm

Dynamic Range:

64 dB

Horizontal Pixel:

1684

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

2/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1264

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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