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KAI-08051-ABA-JD-AE

Onsemi

KAI-08051-ABA-JD-AE by Onsemi

KAI-08051-ABA-JD-AE by Onsemi is a 5.5X5.5 um CCD image sensor with 3364Hx2520V pixels, offering a dynamic range of 66 dB. Operating b/w -50 to 70 °C, it has a supply voltage range of 14.5V to 15.5V and comes in a rectangular package style for applications in imaging systems requiring high-quality image capture.

Median Price

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Lifecycle Status

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Austria . 8,036 parts In-Stock

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TANS Electronics

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Kulean Microsystems

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Corphita

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Overview

Discover unparalleled innovation with the KAI-08051-ABA-JD-AE image sensor by Onsemi. This cutting-edge technology offers exceptional quality and performance for a wide range of applications, from industrial automation to medical imaging. With its advanced features and reliable manufacturer backing, this sensor provides unmatched value and benefits to customers seeking top-tier imaging solutions. Upgrade your projects with the superior capabilities of the KAI-08051-ABA-JD-AE and experience the difference in quality and efficiency.

Feature Benefit Bullets

Pixel Size (um): 5.5X5.5

The small pixel size allows for capturing detailed images with high resolution.

Maximum Supply Voltage: 15.5 V

Higher maximum supply voltage ensures stable and reliable performance.

Body Width: 29 inch

Compact body width makes it easy to integrate into various systems.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image output and low noise levels.

Package Shape or Style: RECTANGULAR

Rectangular shape allows for efficient placement and space utilization.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage ensures energy efficiency.

Maximum Operating Temperature: 70 °C

High maximum operating temperature enables the sensor to perform in various environmental conditions.

Horizontal Pixel: 3364

High horizontal pixel count provides detailed and sharp image output.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Dynamic Range: 66 dB

Wide dynamic range ensures accurate capture of both bright and dark areas in an image.

Vertical Pixel: 2520

High vertical pixel count contributes to the overall resolution and clarity of images.

Body Length/Diameter: 40 mm

Compact body length/diameter makes the sensor versatile and easy to install.

Optical Format (inch): 4/3

The 4/3 optical format is commonly used in high-quality lenses, ensuring compatibility and optimum performance.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the sensor.

Array Type: INTERLINE

Interline array type offers fast readout speed, ideal for applications requiring quick image capture.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature ensures stable and secure installation of the sensor.

Technical Specifications

Image Sensors KAI-08051-ABA-JD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 39 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

29 inch

Body Length/Diameter:

40 mm

Dynamic Range:

66 dB

Horizontal Pixel:

3364

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Package Shape or Style:

Pixel Size (um):

5.5X5.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2520

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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