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KAI-50140-AXB-JD-B2

Onsemi

KAI-50140-AXB-JD-B2 by Onsemi

KAI-50140-AXB-JD-B2 by Onsemi is an image sensor with 4.5X4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a dynamic range of 60 dB. Ideal for digital output applications requiring high-resolution imaging in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,182 parts In-Stock

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Vyrian

USA . 98 parts In-Stock

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Problanco Electronics

Mexico . 7,309 parts In-Stock

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Kulean Microsystems

USA . 7,026 parts In-Stock

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TANS Electronics

Latvia . 6,918 parts In-Stock

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SupplyDigital Components

Austria . 1,449 parts In-Stock

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Corphita

USA . 645 parts In-Stock

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Corohmni

South Africa . 486 parts In-Stock

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UHIMA Technologies

Türkiye . 241 parts In-Stock

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Overview

Enhance your imaging systems with the KAI-50140-AXB-JD-B2 by Onsemi, a top-tier manufacturer known for its cutting-edge technology and superior quality. This image sensor offers unparalleled performance and precision in capturing high-quality images, making it ideal for applications in industries such as medical imaging, surveillance, and scientific research. Elevate your projects with the unmatched value and benefits that this product provides, delivering exceptional results and reliability that customers can count on.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size allows for high-resolution images to be captured, making this image sensor suitable for applications where detail is crucial.

Maximum Supply Voltage: 15.5 V

The high maximum supply voltage ensures reliable and stable performance of the image sensor even under demanding operating conditions.

Master Clock: 60 MHz

The high master clock frequency enables fast data processing and image capture, making this sensor suitable for applications requiring real-time image analysis.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, this product offers high-quality imaging with low noise levels, making it ideal for applications where image clarity is important.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage allows for energy-efficient operation and extends the battery life of devices using this image sensor.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions, making it suitable for outdoor or industrial applications.

Horizontal Pixel: 10440

The high horizontal pixel count enables the sensor to capture detailed images with high resolution, making it suitable for applications requiring precise image analysis.

Output Type: DIGITAL OUTPUT

The digital output simplifies data processing and integration with digital systems, making it easy to use this image sensor in various applications.

Housing: GLASS

The glass housing provides durability and protection to the sensor, ensuring reliable performance and longevity in demanding environments.

Dynamic Range: 60 dB

With a high dynamic range, this image sensor can capture both bright and dark areas in an image accurately, making it suitable for applications requiring high contrast imaging.

Vertical Pixel: 4800

The vertical pixel count allows for capturing images with high vertical resolution, making this sensor suitable for applications where vertical details are crucial.

Termination Type: SOLDER

The solder termination provides a secure connection, ensuring reliable electrical contact and signal transmission in the device.

Array Type: FRAME

The frame array type enables the sensor to capture images in a sequential and organized manner, making it suitable for applications requiring structured image acquisition.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount allows for easy and secure installation of the sensor on a PCB or device, ensuring stable positioning for accurate image capture.

Technical Specifications

Image Sensors KAI-50140-AXB-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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