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KAI-50140-AXB-JD-B1

Onsemi

KAI-50140-AXB-JD-B1 by Onsemi

KAI-50140-AXB-JD-B1 by Onsemi is an image sensor with 4.5x4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It operates b/w -50 to 60 °C and has a max supply voltage of 15.5 V. Ideal for digital output applications in various industries due to its high dynamic range and frame array type design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 265 parts In-Stock

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265

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Vyrian

USA . 264 parts In-Stock

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264

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TANS Electronics

Latvia . 8,334 parts In-Stock

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Problanco Electronics

Mexico . 5,780 parts In-Stock

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Kulean Microsystems

USA . 3,739 parts In-Stock

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SupplyDigital Components

Austria . 3,273 parts In-Stock

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Corphita

USA . 923 parts In-Stock

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UHIMA Technologies

Türkiye . 812 parts In-Stock

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Corohmni

South Africa . 137 parts In-Stock

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Overview

Discover the world of high-quality imaging with the KAI-50140-AXB-JD-B1 by Onsemi. As a leading manufacturer in the field of image sensors, Onsemi delivers unparalleled performance and reliability. Ideal for a wide range of applications, this image sensor offers exceptional value to customers by providing crystal-clear images with a wide dynamic range. Elevate your imaging experience with the KAI-50140-AXB-JD-B1 and unlock endless possibilities in visual technology.

Feature Benefit Bullets

Pixel Size (um) 4.5X4.5

The small pixel size allows for high resolution and sharp images to be captured, making this image sensor ideal for applications where detailed images are crucial.

Maximum Supply Voltage 15.5 V

The high maximum supply voltage ensures that the image sensor can operate reliably even under demanding conditions, providing stability and consistency in performance.

Master Clock 60 MHz

The fast master clock speed of 60 MHz allows for rapid processing and data transfer, enabling quick and efficient image capture and output.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and low noise levels, making this image sensor a great choice for applications requiring superior image quality.

Minimum Supply Voltage 14.5 V

The relatively low minimum supply voltage ensures efficient power usage and helps in reducing overall power consumption, making this image sensor a cost-effective option.

Maximum Operating Temperature 60 °C

With a high maximum operating temperature of 60 °C, this image sensor can withstand heat and harsh environmental conditions, ensuring durability and reliability in various applications.

Horizontal Pixel 10440

The high horizontal pixel count allows for wide and detailed image capture, making this image sensor suitable for applications requiring expansive coverage and high resolution.

Output Type DIGITAL OUTPUT

Digital output simplifies data processing and transmission, making it easier to integrate this image sensor with other digital systems and devices for seamless operation.

Minimum Operating Temperature -50 °C

The low minimum operating temperature of -50 °C ensures that this image sensor can function effectively even in extremely cold environments, expanding its versatility in different applications.

Maximum Operating Current 11 mA

The low maximum operating current of 11 mA indicates efficient power usage and helps in prolonging battery life, making this image sensor a practical choice for portable or battery-powered devices.

Housing GLASS

The use of glass housing provides protection and durability to the image sensor, safeguarding its internal components and ensuring long-lasting performance in various operating conditions.

Dynamic Range 60 dB

With a dynamic range of 60 dB, this image sensor can capture a wide range of light intensities accurately, resulting in well-balanced and detailed images with enhanced contrast and clarity.

Vertical Pixel 4800

The high vertical pixel count allows for detailed and high-resolution image capture in the vertical direction, making this image sensor suitable for applications requiring precise vertical alignment and clarity.

Termination Type SOLDER

Solder termination ensures secure and reliable connections, minimizing the risk of disconnections or signal loss, and contributing to the overall stability and performance of the image sensor.

Array Type FRAME

The frame array type allows for organized and structured image capture, enabling efficient processing and analysis of image data, making this image sensor a versatile and practical choice for various applications.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and stable attachment of the image sensor to a circuit board or mounting surface, ensuring reliable operation and minimizing the risk of physical damage or dislodgement.

Technical Specifications

Image Sensors KAI-50140-AXB-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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