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KAI-50140-FXA-JD-B1

Onsemi

KAI-50140-FXA-JD-B1 by Onsemi

KAI-50140-FXA-JD-B1 by Onsemi is an image sensor with 4.5X4.5 um pixel size, 60 MHz master clock, and 10440 horizontal pixels. It is ideal for applications requiring high-resolution imaging in a wide temperature range, featuring a max operating temperature of 60 °C and min of -50°C. The sensor offers a digital output with a dynamic range of 60 dB, making it suitable for various industrial and scientific imaging applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,426 parts In-Stock

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Vyrian

USA . 2,401 parts In-Stock

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TANS Electronics

Latvia . 8,096 parts In-Stock

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SupplyDigital Components

Austria . 6,136 parts In-Stock

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Kulean Microsystems

USA . 2,322 parts In-Stock

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Corphita

USA . 926 parts In-Stock

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Problanco Electronics

Mexico . 738 parts In-Stock

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UHIMA Technologies

Türkiye . 448 parts In-Stock

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Corohmni

South Africa . 219 parts In-Stock

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Overview

Capture the essence of every moment with the KAI-50140-FXA-JD-B1 by Onsemi. As a leading manufacturer in the industry, Onsemi has developed this cutting-edge image sensor to deliver unparalleled quality and performance. Perfect for a wide range of applications, this sensor offers customers enhanced value and benefits that set it apart from the competition. Immerse yourself in crisp, clear images with the KAI-50140-FXA-JD-B1 and experience the difference that Onsemi technology can make in your projects.

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

Smaller pixel size allows for higher resolution imaging with more detail.

Maximum Supply Voltage: 15.5 V

Allows for high voltage input which can ensure optimal performance and functionality.

Master Clock: 60 MHz

High clock frequency enables fast processing of image data for real-time applications.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture capabilities.

Package Shape or Style: RECTANGULAR

Rectangular shape makes it easy to integrate into various electronic devices and systems.

Minimum Supply Voltage: 14.5 V

Lower minimum supply voltage helps in saving power and reducing energy consumption.

Maximum Operating Temperature: 60 °C

Wide operating temperature range ensures reliable performance in various environments.

Horizontal Pixel: 10440

High number of horizontal pixels results in sharp and detailed images.

Output Type: DIGITAL OUTPUT

Digital output simplifies connectivity and compatibility with digital devices.

Minimum Operating Temperature: -50 °C

Low minimum operating temperature allows for use in extreme cold conditions.

Maximum Operating Current: 11 mA

Low operating current consumption helps in energy efficiency and longer battery life.

Housing: GLASS

Glass housing provides durability and protection to the sensitive image sensor components.

Dynamic Range: 60 dB

Wide dynamic range enables capturing images with both bright and dark areas accurately.

Vertical Pixel: 4800

High number of vertical pixels contributes to overall image quality and resolution.

Termination Type: SOLDER

Solder termination ensures secure and reliable connections during installation or assembly.

Array Type: FRAME

Frame array type simplifies image processing and manipulation for various applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mount design offers stability and ease of installation in electronic circuit boards.

Technical Specifications

Image Sensors KAI-50140-FXA-JD-B1 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Array Type:

FRAME

Dynamic Range:

60 dB

Horizontal Pixel:

10440

Housing:

GLASS

Master Clock:

60 MHz

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

4800

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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