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AR0220AT3R00XUEA0-DRBR-E

Onsemi

AR0220AT3R00XUEA0-DRBR-E by Onsemi

The Onsemi AR0220AT3R00XUEA0-DRBR-E is a CMOS image sensor with 4.2x4.2 um pixel size, 120 dB dynamic range, and 50 MHz master clock. Ideal for applications requiring high-resolution imaging such as surveillance cameras, drones, and industrial machine vision systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 881 parts In-Stock

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881

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Digiode

USA . 585 parts In-Stock

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585

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Distributors (Availability)

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Native Components

USA . 489 parts In-Stock

1+ parts

$2,922.830

100+ parts

$2,864.373

1k+ parts

$2,835.145

10k+ parts

$2,805.917

489

$2,922.830

$2,864.373

$2,835.145

$2,805.917

Northwest PG Solutions

USA . 766 parts In-Stock

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$3,215.113

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766

$3,215.113

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Kulean Microsystems

USA . 7,490 parts In-Stock

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7,490

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TANS Electronics

Latvia . 4,906 parts In-Stock

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4,906

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Problanco Electronics

Mexico . 4,318 parts In-Stock

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4,318

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SupplyDigital Components

Austria . 3,674 parts In-Stock

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3,674

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Corphita

USA . 681 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 385 parts In-Stock

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UHIMA Technologies

Türkiye . 304 parts In-Stock

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Corohmni

South Africa . 143 parts In-Stock

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Overview

Capture every moment with the AR0220AT3R00XUEA0-DRBR-E image sensor by Onsemi. Designed with precision and quality in mind, this sensor delivers unparalleled performance and reliability. Perfect for a wide range of applications, this sensor offers stunning image clarity and crisp detail, making it ideal for use in security cameras, automotive safety systems, and industrial inspection equipment. Experience the value and benefits of advanced imaging technology with the AR0220AT3R00XUEA0-DRBR-E – where quality meets innovation.

Feature Benefit Bullets

Pixel Size (um): 4.2X4.2

Smaller pixel size allows for higher resolution images and better low-light performance.

Maximum Supply Voltage: 1.26 V

Efficient power usage and lower risk of damage from overvoltage.

Master Clock: 50 MHz

High clock speed enables fast data processing and high frame rates.

Body Width: 9 inch

Compact size for easy integration into various devices.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and reduces noise interference.

Dynamic Range: 120 dB

Wide dynamic range provides detailed images with both bright and dark areas.

Array Type: FRAME

Frame array allows for capturing multiple images simultaneously for applications such as video recording.

Technical Specifications

Image Sensors AR0220AT3R00XUEA0-DRBR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER; IT ALSO REQUIRES 2.8V NOMINAL SUPPLY

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.65 mm

Body Length/Diameter:

12 mm

Dynamic Range:

120 dB

Frame Rate:

60 fps

Horizontal Pixel:

1820

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/1.8

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.2X4.2

Sensitivity (V/lx.s):

60.5 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

940

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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