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AR0237IRSH12SPRA0-DR-E

Onsemi

AR0237IRSH12SPRA0-DR-E by Onsemi

Onsemi's AR0237IRSH12SPRA0-DR-E is a 3x3 um CMOS image sensor with 1928H x 1088V pixels. It operates at a max supply voltage of 1.95V, has a master clock of 48 MHz, and offers a dynamic range of 96 dB. Ideal for applications requiring high-resolution imaging at up to 30 fps in a compact square package.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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Native Components

USA . 91 parts In-Stock

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Northwest PG Solutions

USA . 2,123 parts In-Stock

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Kulean Microsystems

USA . 8,190 parts In-Stock

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Problanco Electronics

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TANS Electronics

Latvia . 6,704 parts In-Stock

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SupplyDigital Components

Austria . 4,094 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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Corohmni

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Overview

Capture every moment with crystal-clear precision using the AR0237IRSH12SPRA0-DR-E Image Sensor by Onsemi. Known for their exceptional quality and reliability, Onsemi has crafted a sensor that exceeds expectations in image resolution and clarity. Perfect for applications such as surveillance systems, automotive cameras, and industrial imaging, this sensor offers unparalleled value, delivering sharp, vibrant images with a wide dynamic range. Elevate your projects with the superior performance of the AR0237IRSH12SPRA0-DR-E Image Sensor.

Feature Benefit Bullets

Pixel Size (um): 3X3

Small pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 1.95 V

Higher supply voltage ensures stable and reliable operation of the image sensor.

Master Clock: 48 MHz

High master clock frequency enables faster processing of image data for real-time applications.

Body Width: 11.43 inch

Compact body width makes the image sensor suitable for space-constrained applications.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high integration capability.

Body Height: 1.535 mm

Low body height facilitates easy integration into imaging systems with limited space.

Package Shape or Style: SQUARE

Square package shape allows for efficient utilization of space on circuit boards.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption of the image sensor.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliable performance in varying environmental conditions.

Horizontal Pixel: 1928

High horizontal pixel count enables the capture of detailed and high-resolution images.

Output Range: 0.40-1.50V

Wide output range provides flexibility in adjusting the output signal based on application requirements.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies interfacing with digital systems for seamless data transmission.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows the image sensor to function reliably in cold environments.

Maximum Operating Current: 50 mA

Moderate operating current ensures efficient power usage without compromising performance.

Housing: PLASTIC

Plastic housing offers a cost-effective and lightweight solution for the image sensor.

Dynamic Range: 96 dB

High dynamic range enables the image sensor to capture a wide range of brightness levels in a scene.

Vertical Pixel: 1088

Vertical pixel count contributes to the overall resolution and quality of images captured by the sensor.

Body Length/Diameter: 11.43 mm

Compact body length/diameter allows for easy integration and assembly in imaging systems.

Optical Format (inch): 1/2.7

Common optical format ensures compatibility with a wide range of lenses for diverse imaging applications.

Termination Type: SOLDER

Solder termination provides a secure and reliable connection for the image sensor on circuit boards.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies the connectivity of the image sensor with external devices for data transfer.

Frame Rate: 30 fps

High frame rate of 30 fps enables smooth and real-time video capture using the image sensor.

Array Type: LINEAR

Linear array configuration simplifies the image capturing process and ensures uniform image quality across the frame.

Mounting Feature: SURFACE MOUNT

Surface mount capability makes the image sensor easy to mount on PCBs for streamlined manufacturing processes.

Technical Specifications

Image Sensors AR0237IRSH12SPRA0-DR-E attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG VOLTAGE 2.5-3.1 V

Array Type:

LINEAR

Body Width:

11.43 inch

Body Height:

1.535 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

96 dB

Frame Rate:

30 fps

Horizontal Pixel:

1928

Housing:

PLASTIC

Master Clock:

48 MHz

Mounting Feature:

Maximum Operating Current:

50 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/2.7

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1088

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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