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NOIP3SN1300A-QDI

Onsemi

NOIP3SN1300A-QDI by Onsemi

NOIP3SN1300A-QDI by Onsemi is an Image Sensor with 4.80X4.80 um pixel size, 1.9V max supply voltage, and 72 MHz master clock. Ideal for applications requiring high-speed digital imaging in a compact form factor.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 12,650 parts In-Stock

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Digiode

USA . 2,103 parts In-Stock

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AZTECH Wire

Italy . 985 parts In-Stock

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TANS Electronics

Latvia . 7,981 parts In-Stock

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SupplyDigital Components

Austria . 6,325 parts In-Stock

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Kulean Microsystems

USA . 2,348 parts In-Stock

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Problanco Electronics

Mexico . 1,660 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 257 parts In-Stock

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UHIMA Technologies

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Corphita

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Overview

Capture vivid imagery with the NOIP3SN1300A-QDI image sensor by Onsemi. This cutting-edge technology offers unparalleled quality and reliability, making it the top choice for a wide range of applications. From security cameras to medical imaging devices, this sensor delivers exceptional performance and precision. With Onsemi's reputation for excellence in manufacturing, you can trust that this product will exceed your expectations. Upgrade your projects with the NOIP3SN1300A-QDI and experience the unmatched value and benefits it brings to your work.

Feature Benefit Bullets

Pixel Size (um): 4.80X4.80

High pixel size allows for more light to be captured, resulting in better image quality and sensitivity.

Maximum Supply Voltage: 1.9 V

Operates at a relatively low voltage, which helps in reducing power consumption.

Master Clock: 72 MHz

High clock speed enables fast data processing and image capturing.

Body Width: 14.22 inch

Compact size makes it suitable for various applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors are known for their low power consumption and high image quality, making it a desirable choice.

Body Height: 2.28 mm

Low profile design allows for easy integration into devices without adding bulk.

Package Shape or Style: SQUARE

Square package shape ensures easy mounting and alignment during assembly.

Minimum Supply Voltage: 1.7 V

Allows for operation at low power levels, extending battery life in portable devices.

Maximum Operating Temperature: 85 °C

Wide operating temperature range makes it suitable for use in various environmental conditions.

Horizontal Pixel: 1280

High horizontal pixel count provides detailed images with sharp resolution.

Output Type: DIGITAL VOLTAGE

Digital output simplifies integration with other electronics and processing systems.

Minimum Operating Temperature: -40 °C

Operates reliably even in extremely low temperatures, making it ideal for outdoor use.

Maximum Operating Current: 80 mA

Low operating current ensures energy efficiency and minimal power consumption.

Dynamic Range: 60 dB

Wide dynamic range enables capturing images with both bright and dark areas accurately.

Vertical Pixel: 1024

High vertical pixel count provides detailed images with excellent clarity.

Body Length/Diameter: 14.22 mm

Compact size and shape allow for versatile mounting options and easy integration.

Spectral Response (nm): 400-1000

Broad spectral response range ensures compatibility with a wide range of light sources and applications.

Optical Format (inch): 1/2

Standard optical format allows for compatibility with various lenses and optical systems.

Data Rate: 72 Mbps

High data rate enables quick transfer of image data, reducing lag and latency.

Termination Type: SOLDER

Solder termination ensures secure and reliable connection in electronic circuits and systems.

Output Interface Type: 4-WIRE INTERFACE

4-wire interface provides a stable and efficient connection for data transmission.

Frame Rate: 210 fps

High frame rate allows for capturing fast-moving objects with smooth and clear video quality.

Array Type: FULL FRAME

Full frame array ensures maximum light capture and image quality across the entire sensor surface.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies the installation process and allows for secure attachment to PCBs.

Technical Specifications

Image Sensors NOIP3SN1300A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3V NOMINAL SUPPLY VOLTAGE; IT ALSO HAVE MASTER CLOCK 360 MHZ (10-BIT) AND 288 MHZ (8-BIT) WHEN PLL IS NOT USED

Array Type:

FULL FRAME

Body Width:

14.22 inch

Body Height:

2.28 mm

Body Length/Diameter:

14.22 mm

Data Rate:

72 Mbps

Dynamic Range:

60 dB

Frame Rate:

210 fps

Horizontal Pixel:

1280

Master Clock:

72 MHz

Mounting Feature:

Maximum Operating Current:

80 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/2

Output Interface Type:

4-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

4.80X4.80

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1024

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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