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NOIP1SN2000A-QDI

Onsemi

NOIP1SN2000A-QDI by Onsemi

NOIP1SN2000A-QDI by Onsemi is a 1920x1200 CMOS image sensor with 4.8um pixel size, 360MHz master clock, and 60dB dynamic range. Ideal for high-speed imaging applications requiring a frame rate of up to 230fps.

Median Price

$200.860

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 17 parts In-Stock

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$200.860

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17

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Vyrian

USA . 12,112 parts In-Stock

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Digiode

USA . 1,614 parts In-Stock

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1,614

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Distributors (Availability)

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.706

100+ parts

$1.620

1k+ parts

$1.620

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-

3,000

$1.706

$1.620

$1.620

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Aztec Data Supply Inc.

USA . 285 parts In-Stock

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$2.730

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285

$2.730

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AZTECH Wire

Italy . 663 parts In-Stock

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$11.861

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663

$11.861

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Ampacity Inc.

Singapore . 1,517 parts In-Stock

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$39.750

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1,517

$39.750

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Corohmni

South Africa . 482 parts In-Stock

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$196.843

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482

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Continental Prestige Electronics

USA . 6,124 parts In-Stock

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$200.860

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$196.843

6,124

$200.860

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$196.843

Problanco Electronics

Mexico . 6,216 parts In-Stock

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Kulean Microsystems

USA . 5,526 parts In-Stock

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TANS Electronics

Latvia . 4,009 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 1,013 parts In-Stock

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UHIMA Technologies

Türkiye . 939 parts In-Stock

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939

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Argo Parts USA

USA . 391 parts In-Stock

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391

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Corphita

USA . 315 parts In-Stock

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315

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Perfect Parts

USA . 199 parts In-Stock

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199

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Overview

Unleash the power of cutting-edge technology with the NOIP1SN2000A-QDI by Onsemi. As a leader in image sensor manufacturing, Onsemi delivers unparalleled quality and reliability in every product. Ideal for a wide range of applications, this image sensor offers exceptional value with its superior performance, advanced features, and seamless integration capabilities. Elevate your projects to new heights with the NOIP1SN2000A-QDI and experience the difference that only Onsemi can provide.

Feature Benefit Bullets

Pixel Size (um) 4.8X4.8

Small pixel size allows for high resolution images to be captured with fine details, making this image sensor suitable for applications requiring high image quality.

Maximum Supply Voltage 1.9 V

Low maximum supply voltage ensures efficient power consumption and minimizes heat dissipation, making the image sensor suitable for portable devices or applications where power efficiency is important.

Master Clock 360 MHz

High master clock frequency enables fast image capture and data processing, making this image sensor suitable for applications that require real-time image processing or high-speed imaging.

Sensors or Transducers Type IMAGE SENSOR,CMOS

CMOS image sensors offer low noise performance, high sensitivity, and low power consumption, making them a popular choice for a wide range of imaging applications.

Dynamic Range 60 dB

Wide dynamic range allows the sensor to capture both bright and dark areas in an image with accurate details, making it suitable for capturing high-contrast scenes or environments with varying lighting conditions.

Package Shape or Style SQUARE

Square package shape allows for easy integration into compact devices or systems, making this image sensor suitable for space-constrained applications.

Frame Rate 230 fps

High frame rate enables the sensor to capture fast-moving objects or dynamic scenes with smooth motion, making it suitable for applications such as sports recording or motion analysis.

Sensitivity (V/lx.s) 7.5 V/lx.s

High sensitivity allows the sensor to capture clear images even in low-light conditions, making it ideal for applications where light levels may vary or where lighting is limited.

Mounting Feature SURFACE MOUNT

Surface mounting feature simplifies the assembly process and allows for easy integration into PCBs or other electronic devices, making this image sensor suitable for mass production and automated manufacturing processes.

Technical Specifications

Image Sensors NOIP1SN2000A-QDI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

2.41 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

230 fps

Horizontal Pixel:

1920

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

2/3

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1200

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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