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NOIP1FN5000A-LTI

Onsemi

NOIP1FN5000A-LTI by Onsemi

NOIP1FN5000A-LTI by Onsemi is a 4.8x4.8 um CMOS image sensor with 2592x2048 pixels, offering a dynamic range of 60 dB and sensitivity of 7.5 V/lx.s. It operates b/w -40 to 85 °C, has a max supply voltage of 1.9 V, and supports a frame rate of 100 fps. Ideal for applications requiring high-resolution imaging in various lighting conditions.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,971 parts In-Stock

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Digiode

USA . 112 parts In-Stock

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AZTECH Wire

Italy . 127 parts In-Stock

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$15.080

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SupplyDigital Components

Austria . 4,836 parts In-Stock

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Kulean Microsystems

USA . 2,839 parts In-Stock

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TANS Electronics

Latvia . 2,571 parts In-Stock

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Problanco Electronics

Mexico . 2,085 parts In-Stock

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Corphita

USA . 1,662 parts In-Stock

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Corohmni

South Africa . 377 parts In-Stock

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Unleash the power of high-quality imaging with the NOIP1FN5000A-LTI by Onsemi. As a leading manufacturer in the industry, Onsemi's Image Sensors are renowned for their exceptional performance and reliability. Ideal for a wide range of applications, this product offers unparalleled value with its advanced features and cutting-edge technology. Experience crystal-clear images and unmatched precision with the NOIP1FN5000A-LTI, setting new standards in imaging excellence.

Feature Benefit Bullets

Pixel Size (um): 4.8X4.8

Smaller pixel size allows for higher resolution images to be captured

Maximum Supply Voltage: 1.9 V

Efficient power consumption with a low maximum supply voltage

Master Clock: 360 MHz

High master clock frequency enables fast image capturing and processing

Body Width: 19 inch

Compact size for easy integration into various devices

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor provides high-quality image output

Package Shape or Style: SQUARE

Square package design for easy mounting and integration

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage for efficient power usage

Maximum Operating Temperature: 85 °C

Wide operating temperature range for versatile use

Horizontal Pixel: 2592

High horizontal pixel count for detailed image capture

Minimum Operating Temperature: -40 °C

Allows for operation in extreme cold conditions

Dynamic Range: 60 dB

Wide dynamic range for capturing images in various lighting conditions

Vertical Pixel: 2048

High vertical pixel count for detailed image capture

Body Length/Diameter: 19 mm

Compact size for easy integration into devices

Spectral Response (nm): 400-1000

Broad spectral response range for capturing a wide range of colors

Termination Type: SOLDER

Reliable solder termination for secure connections

Output Interface Type: 4-WIRE INTERFACE

4-wire interface for easy connectivity with other devices

Frame Rate: 100 fps

High frame rate for smooth video recording

Array Type: FRAME

Frame array type for efficient image capture

Sensitivity (V/lx.s): 7.5 V/lx.s

High sensitivity for capturing clear images in low light conditions

Mounting Feature: SURFACE MOUNT

Surface mount feature for easy installation and secure mounting

Technical Specifications

Image Sensors NOIP1FN5000A-LTI attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT 3.3 V NOMINAL SUPPLY VOLTAGE

Array Type:

FRAME

Body Width:

19 inch

Body Height:

1.78 mm

Body Length/Diameter:

19 mm

Dynamic Range:

60 dB

Frame Rate:

100 fps

Horizontal Pixel:

2592

Master Clock:

360 MHz

Mounting Feature:

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1

Output Interface Type:

4-WIRE INTERFACE

Package Shape or Style:

Pixel Size (um):

4.8X4.8

Sensitivity (V/lx.s):

7.5 V/lx.s

Sensors or Transducers Type:

Spectral Response (nm):

400-1000

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

2048

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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