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AR0147ATSC00XUEG0-TPBR

Onsemi

AR0147ATSC00XUEG0-TPBR by Onsemi

Onsemi's AR0147ATSC00XUEG0-TPBR is a 3x3 um CMOS image sensor with 1344H x 968V pixels, offering a dynamic range of 140 dB. Operating at -40 to 110 °C, it has a max supply voltage of 1.26 V and output interface type of 2-WIRE INTERFACE. Ideal for applications requiring high-resolution imaging and low-light sensitivity in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,076 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 145 parts In-Stock

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$21.840

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Native Components

USA . 859 parts In-Stock

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$73.966

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Northwest PG Solutions

USA . 1,128 parts In-Stock

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$84.753

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Kulean Microsystems

USA . 7,871 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 6,924 parts In-Stock

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TANS Electronics

Latvia . 5,605 parts In-Stock

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Problanco Electronics

Mexico . 3,240 parts In-Stock

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Corphita

USA . 1,087 parts In-Stock

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UHIMA Technologies

Türkiye . 254 parts In-Stock

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Corohmni

South Africa . 60 parts In-Stock

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Overview

With the AR0147ATSC00XUEG0-TPBR by Onsemi, you can expect nothing but top-notch quality and performance. As a leading manufacturer in the industry, Onsemi delivers cutting-edge image sensors that are perfect for a wide range of applications. Whether you're looking to enhance your security system or improve the quality of your camera, this image sensor offers unparalleled value, benefits, and advantages. Trust Onsemi to provide you with the innovative technology you need to take your projects to the next level.

Feature Benefit Bullets

Pixel Size (um): 3X3

Smaller pixel size allows for higher resolution images to be captured with greater detail.

Maximum Supply Voltage: 1.26 V

Allows for efficient power usage while ensuring optimal performance.

Master Clock: 50 MHz

High master clock speed enables fast data processing and response times.

Body Width: 7 inch

Compact size for easy integration into various devices and systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS sensors offer low power consumption and high integration capabilities.

Body Height: 1.5 mm

Low profile design for space-saving applications.

Package Shape or Style: RECTANGULAR

Standard package shape for easy assembly and compatibility with existing designs.

Minimum Supply Voltage: 1.14 V

Wide operating voltage range for flexibility and stability.

Maximum Operating Temperature: 110 °C

High operating temperature range for versatile usage in different environments.

Horizontal Pixel: 1344

High horizontal pixel count for sharp and detailed image capture.

Output Type: DIGITAL VOLTAGE

Digital output simplifies data processing and improves signal integrity.

Minimum Operating Temperature: -40 °C

Wide operating temperature range for reliable performance even in extreme conditions.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Durable terminal finish for long-lasting and reliable connections.

Maximum Operating Current: 540 mA

High operating current for fast data transfer and processing.

Dynamic Range: 140 dB

Wide dynamic range for capturing images with high contrast and details.

Vertical Pixel: 968

Vertical pixel count for capturing detailed images with depth and clarity.

Body Length/Diameter: 8 mm

Compact body size for easy integration and space-saving designs.

Optical Format (inch): 1/4

Standard optical format for compatibility with various lenses and optics.

Termination Type: SOLDER

Secure termination type for reliable connections and data transmission.

Output Interface Type: 2-WIRE INTERFACE

Simple and easy-to-use output interface for seamless integration with other systems.

Frame Rate: 60 fps

High frame rate for capturing fast-moving objects with smooth and clear results.

Array Type: FRAME

Frame array type for efficient image capture and processing.

Sensitivity (V/lx.s): 30.7 V/lx.s

High sensitivity for capturing images in low-light conditions with great detail.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy installation and secure mounting in various applications.

Technical Specifications

Image Sensors AR0147ATSC00XUEG0-TPBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER

Array Type:

FRAME

Body Width:

7 inch

Body Height:

1.5 mm

Body Length/Diameter:

8 mm

Dynamic Range:

140 dB

Frame Rate:

60 fps

Horizontal Pixel:

1344

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

540 mA

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/4

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3X3

Sensitivity (V/lx.s):

30.7 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

968

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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