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MT9M032C12STMU-DP

Onsemi

MT9M032C12STMU-DP by Onsemi

MT9M032C12STMU-DP by Onsemi is an image sensor with 2.20x2.20 um pixel size, 49.5 MHz master clock, and 70.1 dB dynamic range. Ideal for applications requiring high-resolution imaging such as surveillance cameras, automotive vision systems, and industrial machine vision setups due to its superior performance specifications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,023 parts In-Stock

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Digiode

USA . 1,952 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 800 parts In-Stock

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$2.301

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$2.301

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$2.301

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800

$2.301

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AZTECH Wire

Italy . 987 parts In-Stock

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$20.230

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SupplyDigital Components

Austria . 6,476 parts In-Stock

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TANS Electronics

Latvia . 6,137 parts In-Stock

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Corphita

USA . 2,256 parts In-Stock

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Problanco Electronics

Mexico . 1,516 parts In-Stock

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Kulean Microsystems

USA . 232 parts In-Stock

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UHIMA Technologies

Türkiye . 126 parts In-Stock

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Corohmni

South Africa . 103 parts In-Stock

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Overview

Capture every detail with the MT9M032C12STMU-DP by Onsemi, a top-tier image sensor that delivers unparalleled quality and precision. With a cutting-edge CMOS design and advanced technology, this sensor is perfect for a wide range of applications. Whether you're in the automotive industry, robotics, or medical imaging, this sensor offers exceptional value, superior performance, and unmatched reliability. Trust Onsemi's reputation for excellence and elevate your projects with the MT9M032C12STMU-DP today.

Feature Benefit Bullets

Pixel Size (um): 2.20X2.20

The small pixel size allows for high resolution images to be captured with great detail.

Maximum Supply Voltage: 1.9 V

The low maximum supply voltage helps in reducing power consumption and heat generation.

Master Clock: 49.5 MHz

The high master clock frequency enables fast image processing and data transmission.

Body Width: 11.43 inch

The compact body width makes the sensor suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensors are known for their low power consumption and high image quality.

Package Shape or Style: SQUARE

The square package shape provides easy integration into a variety of electronic devices.

Minimum Supply Voltage: 1.7 V

The low minimum supply voltage ensures that the sensor operates efficiently even at low power.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows the sensor to be used in various environmental conditions.

Horizontal Pixel: 1472

The high number of horizontal pixels results in high-resolution and detailed images.

Output Range: 0.20-3.05V

The wide output voltage range provides flexibility in interfacing with different electronic components.

Output Type: DIGITAL VOLTAGE

The digital voltage output simplifies data processing and communication with other digital devices.

Minimum Operating Temperature: -30 °C

The low minimum operating temperature allows the sensor to function in cold environments without issues.

Maximum Operating Current: 30 mA

The low operating current helps in reducing power consumption and extends the product's battery life.

Housing: CERAMIC

The ceramic housing provides durability and protection to the sensitive components inside.

Dynamic Range: 70.1 dB

The high dynamic range ensures that details in both bright and dark areas of the image are captured accurately.

Vertical Pixel: 1096

The high number of vertical pixels contributes to the overall image quality and resolution.

Body Length/Diameter: 11.43 mm

The compact body length/diameter makes the sensor easy to integrate into various devices.

Optical Format (inch): 1/4.5

The 1/4.5 inch optical format is compatible with a wide range of lenses, offering flexibility in imaging.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection during installation.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies connectivity with other devices and enables easy data transmission.

Frame Rate: 60 fps

The high frame rate of 60 fps allows for smooth and fast-moving image capture.

Array Type: FRAME

The frame array type provides organization and structure to the pixels, enhancing image quality and processing.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes installation easy and allows for secure attachment to circuit boards.

Technical Specifications

Image Sensors MT9M032C12STMU-DP attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

ELECTRONIC ROLLING SHUTTER, IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 2.60-3.10 V

Array Type:

FRAME

Body Width:

11.43 inch

Body Height:

2.3 mm

Body Length/Diameter:

11.43 mm

Dynamic Range:

70.1 dB

Frame Rate:

60 fps

Horizontal Pixel:

1472

Housing:

CERAMIC

Master Clock:

49.5 MHz

Mounting Feature:

Maximum Operating Current:

30 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/4.5

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

2.20X2.20

Sensors or Transducers Type:

Maximum Supply Voltage:

1.9 V

Minimum Supply Voltage:

1.7 V

Termination Type:

SOLDER

Vertical Pixel:

1096

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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