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MT9V022IA7ATM-DR

Onsemi

MT9V022IA7ATM-DR by Onsemi

The Onsemi MT9V022IA7ATM-DR is a CMOS image sensor with 6x6 um pixel size, 752H x 480V resolution, and 26.6 MHz master clock. It operates at -40 to 85°C, has a dynamic range of 54.4 dB, and uses a digital current output interface. Ideal for applications requiring high-quality imaging in a compact form factor like surveillance cameras or industrial machine vision systems.

Median Price

$15.670

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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USA . 5,200 parts In-Stock

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Verical

USA . 2,600 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$18.306

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Vyrian

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Bristol Electronics

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Digiode

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Semicontronic

India . 6,356 parts In-Stock

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$13.320

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$12.987

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$12.920

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Ampacity Inc.

Singapore . 3,020 parts In-Stock

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iBuyXS LLC

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Corohmni

South Africa . 498 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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$17.940

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Continental Prestige Electronics

USA . 1,211 parts In-Stock

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$18.125

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AZTECH Wire

Italy . 862 parts In-Stock

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$18.630

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Perfect Parts

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GreenTree Electronics

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Kulean Microsystems

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Argo Parts USA

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Corphita

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Problanco Electronics

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Overview

Experience unparalleled quality and innovation with the MT9V022IA7ATM-DR Image Sensor by Onsemi. As a leader in image sensor technology, Onsemi delivers cutting-edge solutions for a wide range of applications. Whether you're in the automotive industry, consumer electronics, or surveillance systems, this CMOS image sensor offers exceptional performance and reliability. With a high pixel count and advanced features, the MT9V022IA7ATM-DR provides incredible value and benefits to customers looking for superior imaging capabilities. Elevate your products and stay ahead of the competition with this top-of-the-line image sensor from Onsemi.

Feature Benefit Bullets

Pixel Size (um): 6X6

The small pixel size allows for high resolution image capture and detailed image quality.

Maximum Supply Voltage: 3.6 V

The high maximum supply voltage ensures reliable and stable power for the image sensor, reducing the risk of malfunctions.

Master Clock: 26.6 MHz

The high master clock frequency enables fast data processing and high-speed image capture, making this sensor suitable for real-time applications.

Body Width: 9 inch

The compact body width of 9 inches allows for easy integration into a variety of devices or systems.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

Being a CMOS image sensor, this product offers low power consumption, high sensitivity, and high image quality, making it ideal for various imaging applications.

Body Height: 1.3 mm

The slim body height of 1.3 mm makes this image sensor suitable for devices with limited space.

Package Shape or Style: SQUARE

The square package shape offers easy handling and installation, and can be mounted securely on a PCB.

Minimum Supply Voltage: 3 V

The low minimum supply voltage ensures efficient power consumption and extends the battery life of devices using this image sensor.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows for reliable performance even in harsh environmental conditions.

Horizontal Pixel: 752

The high horizontal pixel count enables high-resolution image capture with detailed and sharp images.

Output Range: -9-9mA

The wide output range of -9-9mA allows for flexibility in signal processing and compatibility with a variety of external devices.

Output Type: DIGITAL CURRENT

The digital current output type ensures accurate and reliable data transmission, reducing signal interference and noise.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for reliable performance even in cold environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish of Tin Silver Copper provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Maximum Operating Current: 60 mA

The high maximum operating current allows for robust performance and reliable operation, even under heavy load conditions.

Dynamic Range: 54.4 dB

The high dynamic range of 54.4 dB allows for capturing images with a wide range of light intensity levels, resulting in detailed and accurate image reproduction.

Vertical Pixel: 480

The vertical pixel count of 480 enables high-quality image capture with good vertical resolution.

Body Length/Diameter: 9 mm

The compact body length/diameter of 9 mm allows for easy installation and integration into devices or systems with limited space.

Optical Format (inch): 1/3

The 1/3 inch optical format offers a good balance between size and image quality, making this sensor suitable for a wide range of applications.

Termination Type: SOLDER

The solder termination type ensures secure and reliable connections, reducing the risk of signal loss or disconnection.

Output Interface Type: 2-WIRE INTERFACE

The 2-wire interface simplifies communication and data transmission, making it easier to integrate this image sensor into existing systems.

Frame Rate: 60 fps

The high frame rate of 60 fps allows for smooth and fluid video recording or imaging, making this sensor suitable for dynamic applications.

Array Type: FRAME

The frame array type allows for capturing multiple frames in quick succession, enabling high-speed imaging and motion capture.

Mounting Feature: SURFACE MOUNT

The surface mounting feature offers easy and secure installation on PCBs or other surfaces, making integration into devices or systems convenient.

Technical Specifications

Image Sensors MT9V022IA7ATM-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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