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KAI-1003-ABA-CD-AE

Onsemi

KAI-1003-ABA-CD-AE by Onsemi

Onsemi's KAI-1003-ABA-CD-AE is a 12.8X12.8 um CCD image sensor with 1024x1024 pixels, offering a dynamic range of 72 dB. Operating b/w 0 to 40 °C, it has a supply voltage range of 14.5V to 15.5V and comes in a rectangular ceramic housing for industrial imaging applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,958 parts In-Stock

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Vyrian

USA . 530 parts In-Stock

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SupplyDigital Components

Austria . 6,135 parts In-Stock

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TANS Electronics

Latvia . 5,724 parts In-Stock

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Problanco Electronics

Mexico . 3,589 parts In-Stock

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Kulean Microsystems

USA . 2,230 parts In-Stock

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Corphita

USA . 1,472 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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UHIMA Technologies

Türkiye . 61 parts In-Stock

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Overview

Enhance your imaging solutions with the KAI-1003-ABA-CD-AE by Onsemi! This high-quality image sensor boasts superior performance and reliability, thanks to Onsemi's reputation as a top manufacturer in the industry. Ideal for a range of applications, including industrial inspection and medical imaging, this product offers unparalleled value with its impressive dynamic range and high-resolution pixel capabilities. Say goodbye to image quality concerns and elevate your projects with the KAI-1003-ABA-CD-AE today!

Feature Benefit Bullets

Pixel Size (um) 12.8X12.8

The small pixel size allows for high resolution and detail in images captured by this image sensor.

Maximum Supply Voltage 15.5 V

The higher maximum supply voltage provides flexibility in power supply options and can accommodate higher voltage systems.

Body Width 25.4 inch

The compact body width makes this image sensor suitable for applications where space is limited.

Sensors or Transducers Type IMAGE SENSOR,CCD

CCD sensors are known for their high-quality image capture and low noise, making them ideal for demanding imaging applications.

Body Height 4.45 mm

The low body height allows for easy integration into slim devices or systems.

Package Shape or Style RECTANGULAR

The rectangular package shape is common and easy to work with for mounting and integration into various systems.

Minimum Supply Voltage 14.5 V

The minimum supply voltage requirement is relatively low, allowing for efficient power consumption and compatibility with a wide range of power sources.

Maximum Operating Temperature 40 °C

The high maximum operating temperature ensures reliable performance even in elevated temperature environments.

Horizontal Pixel 1024

The high horizontal pixel count results in detailed images with high resolution.

Minimum Operating Temperature 0 °C

The low minimum operating temperature ensures the image sensor can operate in cold environments without issues.

Housing CERAMIC

The ceramic housing provides durability and protection to the image sensor, making it suitable for rugged applications.

Dynamic Range 72 dB

The high dynamic range allows the image sensor to capture a wide range of light intensities, resulting in detailed and balanced images.

Vertical Pixel 1024

The high vertical pixel count contributes to the overall image quality and sharpness of the images captured.

Body Length/Diameter 40.13 mm

The moderate body length/diameter provides a balance between compact size and usability in various applications.

Termination Type SOLDER

The solder termination type ensures a reliable connection between the image sensor and the external components, ensuring consistent performance.

Array Type INTERLINE

The interline array type offers fast readout speeds and high sensitivity, making it suitable for capturing fast-moving subjects or low-light conditions.

Mounting Feature THROUGH HOLE MOUNT

The through-hole mount feature allows for secure and stable mounting of the image sensor onto circuit boards or other surfaces.

Technical Specifications

Image Sensors KAI-1003-ABA-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A SENSITIVITY OF 34 MICRO VOLT PER ELECTRON, ELECTRONIC SHUTTER

Array Type:

INTERLINE

Body Width:

25.4 inch

Body Height:

4.45 mm

Body Length/Diameter:

40.13 mm

Dynamic Range:

72 dB

Horizontal Pixel:

1024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

40 Cel

Minimum Operating Temperature:

0 Cel

Package Shape or Style:

Pixel Size (um):

12.8X12.8

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

1024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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