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KAF-8300-AXC-CD-AE

Onsemi

KAF-8300-AXC-CD-AE by Onsemi

The Onsemi KAF-8300-AXC-CD-AE is a CCD image sensor with 5.4x5.4 um pixel size, offering a dynamic range of 64.4 dB and 3326 horizontal pixels. It operates b/w -10 to 70 °C, making it suitable for high-resolution imaging applications in various industries such as astronomy and microscopy.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

USA . 1,444 parts In-Stock

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Vyrian

USA . 251 parts In-Stock

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Sunrise Surplus Inc.

USA . 1 parts In-Stock

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Problanco Electronics

Mexico . 5,295 parts In-Stock

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SupplyDigital Components

Austria . 759 parts In-Stock

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Corphita

USA . 386 parts In-Stock

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UHIMA Technologies

Türkiye . 332 parts In-Stock

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Corohmni

South Africa . 222 parts In-Stock

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TANS Electronics

Latvia . 112 parts In-Stock

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Kulean Microsystems

USA . 18 parts In-Stock

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Overview

Experience unparalleled image quality and precision with the KAF-8300-AXC-CD-AE by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-of-the-line image sensors that set new standards for clarity and detail. Ideal for a wide range of applications, this CCD sensor offers exceptional performance and reliability. Enhance your imaging projects with the superior value, benefits, and advantages that the KAF-8300-AXC-CD-AE provides, making it the perfect choice for professionals seeking excellence in their work.

Feature Benefit Bullets

Pixel Size (um): 5.4X5.4

This small pixel size allows for high resolution images to be captured, making this product ideal for applications requiring detailed image quality.

Maximum Supply Voltage: 15.5 V

The higher maximum supply voltage enables the sensor to operate efficiently and reliably even under fluctuating power conditions.

Body Width: 20.32 inch

The compact body width makes it easy to integrate this image sensor into various devices or systems without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

The CCD sensor type provides high-quality images with low noise, making it suitable for demanding imaging applications.

Package Shape or Style: RECTANGULAR

The rectangular package shape offers ease of handling and mounting, ensuring straightforward integration into different setups.

Minimum Supply Voltage: 14.5 V

The lower minimum supply voltage ensures efficient power consumption, making this image sensor energy-efficient and cost-effective.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature range allows this sensor to be used in various environmental conditions without performance degradation.

Horizontal Pixel: 3326

The high horizontal pixel count results in detailed and sharp images, making this sensor suitable for applications requiring precise image capture.

Output Type: ANALOG VOLTAGE

The analog voltage output provides compatibility with a wide range of signal processing systems, offering flexibility in data processing.

Minimum Operating Temperature: -10 °C

The low minimum operating temperature ensures the sensor can operate reliably even in cold environments, making it versatile in various settings.

Housing: CERAMIC

The ceramic housing offers durability and thermal stability, protecting the sensor components and ensuring long-term performance reliability.

Dynamic Range: 64.4 dB

The high dynamic range allows the sensor to capture both bright and dark areas of an image accurately, making it suitable for high-contrast scenes.

Vertical Pixel: 2504

The vertical pixel count contributes to the sensor's high-resolution capabilities, ensuring detailed image capture in both horizontal and vertical dimensions.

Body Length/Diameter: 29.21 mm

The compact body length provides flexibility in mounting options and compatibility with a range of devices, making this sensor versatile in various applications.

Data Rate: 28 Mbps

The high data rate allows for fast and efficient transfer of image data, ensuring real-time imaging and responsiveness in data-intensive applications.

Termination Type: SOLDER

The solder termination offers secure and reliable connections, ensuring stable operation and reducing the risk of signal loss or interference.

Array Type: FULL FRAME

The full-frame array type provides uniform image quality and resolution across the entire sensor area, making it suitable for professional imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process, providing secure placement and alignment for the sensor in various setups or configurations.

Technical Specifications

Image Sensors KAF-8300-AXC-CD-AE attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

SENSITIVITY IS 23 MICRO V/ELECTRON

Array Type:

FULL FRAME

Body Width:

20.32 inch

Body Height:

4.42 mm

Body Length/Diameter:

29.21 mm

Data Rate:

28 Mbps

Dynamic Range:

64.4 dB

Horizontal Pixel:

3326

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-10 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

5.4X5.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

2504

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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