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KAI-43140-FXA-JD-B2

Onsemi

KAI-43140-FXA-JD-B2 by Onsemi

KAI-43140-FXA-JD-B2 by Onsemi is an image sensor with 4.5x4.5 um pixel size, 8040 horizontal pixels, and 5360 vertical pixels. It operates b/w -50 to 70 °C with a dynamic range of 60 dB. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,202 parts In-Stock

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Digiode

USA . 1,114 parts In-Stock

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AZTECH Wire

Italy . 902 parts In-Stock

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$17.210

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Kulean Microsystems

USA . 5,464 parts In-Stock

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Problanco Electronics

Mexico . 3,053 parts In-Stock

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SupplyDigital Components

Austria . 1,794 parts In-Stock

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Corphita

USA . 713 parts In-Stock

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TANS Electronics

Latvia . 693 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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UHIMA Technologies

Türkiye . 42 parts In-Stock

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Overview

Elevate your imaging experience with the KAI-43140-FXA-JD-B2 by Onsemi. As a leading manufacturer in image sensors, Onsemi delivers exceptional quality and reliability. Ideal for a wide range of applications, this CCD image sensor offers unparalleled performance and precision. With a high dynamic range and fast data rate, customers can capture stunning images with ease. Say goodbye to mediocre imaging and hello to superior quality with the KAI-43140-FXA-JD-B2. Upgrade your imaging capabilities today!

Feature Benefit Bullets

Pixel Size (um): 4.5X4.5

The small pixel size allows for high resolution imaging, making this product suitable for capturing detailed images.

Maximum Supply Voltage: 15.5 V

With a high maximum supply voltage, this image sensor can handle power fluctuations without compromising performance.

Body Width: 45.34 inch

The compact body width makes this image sensor easy to integrate into various devices without taking up too much space.

Sensors or Transducers Type: IMAGE SENSOR,CCD

Being a CCD image sensor, this product offers high-quality image capture with low noise and excellent light sensitivity.

Package Shape or Style: RECTANGULAR

The rectangular package shape allows for easy mounting and alignment within electronic systems.

Minimum Supply Voltage: 14.5 V

The low minimum supply voltage ensures that this image sensor can operate efficiently even with limited power resources.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this image sensor can withstand harsh environmental conditions without overheating.

Horizontal Pixel: 8040

The high horizontal pixel count results in sharp, detailed images, making this product ideal for high-resolution imaging applications.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows this image sensor to function effectively in cold environments without any performance issues.

Maximum Operating Current: 11 mA

With a low maximum operating current, this image sensor consumes minimal power during operation, making it energy-efficient.

Dynamic Range: 60 dB

The wide dynamic range of this image sensor allows it to capture both bright and dark areas in a scene with accurate color reproduction.

Vertical Pixel: 5360

The vertical pixel count contributes to the overall image quality, ensuring that this product captures clear and sharp images.

Body Length/Diameter: 47.24 mm

The moderate body length/diameter size makes this image sensor easy to handle and install in various devices.

Optical Format (inch): 1.7

The optical format of 1.7 inch ensures compatibility with standard lenses and optical systems for seamless integration.

Data Rate: 60 Mbps

With a high data rate, this image sensor can transmit images quickly and efficiently, making it suitable for real-time applications.

Termination Type: SOLDER

The solder termination type ensures a secure and reliable connection, preventing any signal loss or interference during operation.

Array Type: INTERLINE

The interline array type enhances the sensor's efficiency in capturing fast-moving objects and reducing motion blur in images.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mounting feature offers stable and secure installation, making this image sensor suitable for rugged or high-vibration environments.

Technical Specifications

Image Sensors KAI-43140-FXA-JD-B2 attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT AS OUTPUT SENSITIVITY OF 42 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

45.34 inch

Body Height:

3.61 mm

Body Length/Diameter:

47.24 mm

Data Rate:

60 Mbps

Dynamic Range:

60 dB

Horizontal Pixel:

8040

Mounting Feature:

Maximum Operating Current:

11 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

1.7

Package Shape or Style:

Pixel Size (um):

4.5X4.5

Sensors or Transducers Type:

Maximum Supply Voltage:

15.5 V

Minimum Supply Voltage:

14.5 V

Termination Type:

SOLDER

Vertical Pixel:

5360

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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