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KAE-04472-FBA-SD-FA

Onsemi

KAE-04472-FBA-SD-FA by Onsemi

KAE-04472-FBA-SD-FA by Onsemi is an image sensor with 7.4x7.4 um pixel size, 2096 horizontal and vertical pixels, and a dynamic range of 92 dB. It operates b/w -50 to 60 °C, outputs current, and has a data rate of 40 Mbps. Ideal for applications requiring high-resolution imaging in industrial or scientific settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,179 parts In-Stock

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Digiode

USA . 1,338 parts In-Stock

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Kulean Microsystems

USA . 8,062 parts In-Stock

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Problanco Electronics

Mexico . 3,381 parts In-Stock

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TANS Electronics

Latvia . 1,220 parts In-Stock

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Corphita

USA . 1,217 parts In-Stock

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Corohmni

South Africa . 348 parts In-Stock

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SupplyDigital Components

Austria . 329 parts In-Stock

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Overview

Elevate your imaging experience with the KAE-04472-FBA-SD-FA by Onsemi. Crafted with precision by a trusted manufacturer, this image sensor boasts superior quality and performance. Ideal for a wide range of applications, this sensor delivers exceptional value and benefits to customers seeking top-notch image capture capabilities. Immerse yourself in crystal-clear visuals and unlock a world of possibilities with this cutting-edge technology.

Feature Benefit Bullets

Pixel Size (um): 7.4X7.4

The small pixel size allows for high resolution images to be captured, making this image sensor suitable for detailed imaging applications.

Maximum Supply Voltage: 15.3 V

The high maximum supply voltage allows for efficient power delivery to the sensor, ensuring reliable performance.

Body Width: 41 inch

The compact body width makes the sensor easy to integrate into various systems or devices.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors are known for their high quality image capture and low noise, making this sensor a good choice for demanding imaging applications.

Body Height: 5.62 mm

The low body height allows for the sensor to be used in applications with space constraints.

Package Shape or Style: RECTANGULAR

The rectangular package shape provides ease of mounting and integration into systems.

Minimum Supply Voltage: 14.7 V

The low minimum supply voltage ensures that the sensor can operate efficiently even under lower power conditions.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature allows for the sensor to be used in a wide range of environments without risk of damage.

Horizontal Pixel: 2096

The high horizontal pixel count enables detailed and high-resolution image capture.

Output Type: CURRENT OUTPUT

The current output provides accurate and reliable data transmission for image processing and analysis.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature ensures the sensor can function in extreme cold environments without issues.

Maximum Operating Current: 9 mA

The low maximum operating current ensures energy efficiency and prolonged battery life in portable applications.

Housing: GLASS

The glass housing provides durability and protection to the sensitive components within the sensor.

Dynamic Range: 92 dB

The high dynamic range allows the sensor to capture a wide range of tones and details in the image, resulting in high-quality outputs.

Vertical Pixel: 2096

The high vertical pixel count complements the horizontal pixel count for detailed and high-resolution image capture.

Body Length/Diameter: 43.5 mm

The compact body length/diameter makes the sensor versatile for various mounting options and applications.

Optical Format (inch): 4/3

The 4/3 optical format is commonly used in digital cameras, ensuring compatibility with existing imaging systems.

Data Rate: 40 Mbps

The high data rate allows for fast and efficient data transfer, crucial for real-time imaging applications.

Termination Type: SOLDER

The solder termination type provides a secure and reliable connection for the sensor.

Array Type: INTERLINE

The interline array type offers fast readout speeds and reduced image lag, making it suitable for moving object imaging.

Mounting Feature: THROUGH HOLE MOUNT

The through hole mount feature provides a stable and secure mounting option for the sensor, ensuring consistent performance.

Technical Specifications

Image Sensors KAE-04472-FBA-SD-FA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS OUTPUT SENSITIVITY OF 45 MICRO VOLT PER ELECTRON

Array Type:

INTERLINE

Body Width:

41 inch

Body Height:

5.62 mm

Body Length/Diameter:

43.5 mm

Data Rate:

40 Mbps

Dynamic Range:

92 dB

Horizontal Pixel:

2096

Housing:

GLASS

Mounting Feature:

Maximum Operating Current:

9 mA

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Optical Format (inch):

4/3

Output Type:

Package Shape or Style:

Pixel Size (um):

7.4X7.4

Sensors or Transducers Type:

Maximum Supply Voltage:

15.3 V

Minimum Supply Voltage:

14.7 V

Termination Type:

SOLDER

Vertical Pixel:

2096

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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